The present disclosure, in some embodiments, relates to a brush cleaning apparatus. The brush cleaning apparatus includes a wafer support configured to support a wafer. The brush cleaning apparatus also includes a cleaning brush including a porous material coupled to a core material. An uppermost surface of the porous material defines a planar cleaning surface. A first nozzle is configured to apply a first cleaning liquid directly between the wafer and the planar cleaning surface of the cleaning brush.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A substrate cleaning method includes: providing a substrate including a low-k layer containing silicon to a substrate support; etching the low-k layer by a plasma generated from a first gas; separating the etched substrate from the substrate support; and removing a reaction product attached to the substrate in the etching by a plasma generated from a second gas. The second gas includes a first carbon-containing gas represented by C.sub.xH.sub.yF.sub.z (y≥0, x/z>¼).

Methods and apparatus for supporting a substrate are provided herein. In some embodiments, a substrate support to support a substrate having a given diameter includes: a base ring having an inner diameter less than the given diameter, the base ring having a support surface configured to contact a first surface of the substrate and to form a seal between the support surface and the first surface of the substrate, when disposed atop the base ring; and a clamp ring having an inner diameter less than the given diameter, wherein the clamp ring includes a contact surface proximate the inner diameter configured to contact an upper surface of the substrate, when present, and wherein the clamp ring and the base ring are further configured to provide a bias force toward each other to clamp the substrate in the substrate support.

A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

A wafer cleaning apparatus includes: a brush, configured to wash a surface to be cleaned of a wafer; a base for carrying the brush, the base having at least one conductive disk, a disk surface of the conductive disk being parallel to the surface to be cleaned, and the base being able to rotate around an axis of the base; and a magnetic field generation structure configured to emit, to the conductive disk, a magnetic field perpendicular to the disk surface of the conductive disk, so that an induced electric field is generated in the conductive disk during the rotation of the base. The quality of wafer cleaning and the yield of wafer products can be improved.

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

Providing a substrate cleaning device and a substrate cleaning method having high detergency. Provided is a substrate cleaning device including: a substrate rotating mechanism that rotates a substrate; and a first nozzle and a second nozzle that eject an ultrasonic cleaning solution toward a predetermined surface of the substrate that is rotated, wherein the first nozzle and the second nozzle are held in one casing.

A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.

A substrate processing apparatus processes a substrate having an upper side and a rear side. The substrate processing apparatus includes a substrate holder, a filler feeder, and a first cleaning liquid feeder. The substrate holder rotates the substrate while holding a central portion of the rear side of the substrate. The filler feeder feeds filler to the upper side of the substrate held by the substrate holder. The first cleaning liquid feeder feeds a cleaning liquid to the rear side of the substrate held by the substrate holder. The first cleaning liquid feeder feeds the cleaning liquid to an area, held by the substrate holder, of the rear side of the substrate.