Disclosed herein are thermoreflectance enhancement coatings and methods of making and use thereof.

A patterning method, comprising: disposing a nanoparticle composition on a support material, the disposing being performed such that the nanoparticle composition defines a patterned region having an average inter-nanoparticle distance of less than about 5 nm; and selectively etching the support material so as to give rise to in the support material a plurality of arrayed structures substantially in register with the patterned region of the nanoparticle composition.

An article, comprising an article made according to the present disclosure.

A workpiece, comprising: an etchable support material; and a nanoparticle composition, the nanoparticle composition being disposed on the support material as a monolayer, the nanoparticle composition defining a patterned region having an average inter-nanoparticle distance of less than about 5 nm, and nanoparticles of the nanoparticle composition having ligands disposed thereon.

An article, comprising: a substrate, the substrate having formed therein a plurality of structures arranged arrayed periodically, the structures defining an average inter-structure spacing of less than about 5 nm.

A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

A method for fabricating an NAND flash memory includes providing a semiconductor substrate with a core region and a peripheral region, forming a plurality of discrete gate stack structures in the core region with neighboring gate stack structures separated by a first dielectric layer. The method further includes forming a flowable dielectric layer on the first dielectric layer and the gate stack structures, and forming a solid dielectric layer through a solidification treatment process performed on the flowable dielectric layer. Voids and seams formed in the top portion of the first dielectric layer are filled by the solid dielectric layer. The method also includes removing the solid dielectric layer and a portion of the first dielectric layer to expose a top portion of the gate stack structures, and forming a metal silicide layer on each gate stack structure.

A method of manufacturing a semiconductor light emitting device, the method including arranging multiple particles M in a monolayer on a substrate S, dry etching the multiple particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not substantially etched; and dry etching the substrate S by using the multiple particles M.sub.1 after the particle etching as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

A method for fabricating an NAND flash memory includes providing a semiconductor substrate with a core region and a peripheral region, forming a plurality of discrete gate stack structures in the core region with neighboring gate stack structures separated by a first dielectric layer. The method further includes forming a flowable dielectric layer on the first dielectric layer and the gate stack structures, and forming a solid dielectric layer through a solidification treatment process performed on the flowable dielectric layer. Voids and seams formed in the top portion of the first dielectric layer are filled by the solid dielectric layer. The method also includes removing the solid dielectric layer and a portion of the first dielectric layer to expose a top portion of the gate stack structures, and forming a metal silicide layer on each gate stack structure.

Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.