The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula Si.sub.nH.sub.2n, wherein n is 5, 6, or 7.

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

A method of increasing the resistivity of a silicon carbide wafer includes providing a silicon carbide wafer with a first resistivity, and applying a microwave to treat the silicon carbide wafer. The treated silicon carbide wafer has a second resistivity. The second resistivity is higher than the first resistivity. The microwave treated silicon carbide wafer can be applied in a high-frequency device.

A method for manufacturing semiconductor structure is disclosed. The method includes: providing a semiconductor substrate; hydrogenizing a surface of the semiconductor substrate; supplying a precursor to the surface of the semiconductor substrate; and supplying a reactant to the surface of the semiconductor substrate. An associated method for performing an atomic layer deposition (ALD) upon a semiconductor substrate and an associated atomic layer deposition (ALD) method are also disclosed.

A composition for temporary bonding, includes: (A) a (meth)acrylate having the following (A-1) and (A-2): (A-1) a monofunctional (meth)acrylate whose side chain is an alkyl group having 18 or more carbon atoms and homopolymer has a Tg of −100° C. to 60° C., and (A-2) a polyfunctional (meth)acrylate; (B) a polyisobutene homopolymer and/or a polyisobutene copolymer; and (C) a photo radical polymerization initiator.

An expansion sheet is adapted to be held and expanded by an expanding apparatus when a platelike workpiece is attached to the expansion sheet. The expansion sheet has a peripheral area around the workpiece where the expansion sheet is adapted to be held by first, second, third, and fourth holding units that are moveable away from each other. The expansion sheet includes a base sheet and an adhesive layer formed on the base sheet, the adhesive layer having adhesion adapted to be reduced by applying ultraviolet light. The adhesion of the adhesive layer in the peripheral area of the expansion sheet is lower than that in the other area of the expansion sheet.

Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A field is applied to the intermediate layer, wherein the field source does not contact the semiconductor device. The polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.