FCVD using multi-step anneal treatment and devices thereof are disclosed. In an embodiment, a method includes depositing a flowable dielectric film on a substrate. The flowable dielectric film is deposited between a first semiconductor fin and a second semiconductor fin. The method further includes annealing the flowable dielectric film at a first anneal temperature for at least 5 hours to form a first dielectric film, annealing the first dielectric film at a second anneal temperature higher than the first anneal temperature to form a second dielectric film, annealing the second dielectric film at a third anneal temperature higher than the first anneal temperature to form an insulating layer, applying a planarization process to the insulating layer, and etching the insulating layer to STI regions on the substrate.

A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.

A method for manufacturing a display module includes preparing a display module comprising a plurality of layers and forming a through-hole in the display module. The forming the through-hole includes performing a first irradiation process of irradiating a first laser beam along a first boundary defining the through-hole, performing a second irradiation process of irradiating a second laser beam along a second boundary after the first irradiation process, and performing a third irradiation process of irradiating a third laser beam along a third boundary after the second irradiation process. A time interval between the first irradiation process and the second irradiation process may be different from a time interval between the second irradiation process and the third irradiation process.

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

A method includes forming a silicon liner over a semiconductor device, which includes a dummy gate structure disposed over a substrate and S/D features disposed adjacent to the dummy gate structure, where the dummy gate structure traverses a channel region between the S/D features. The method further includes forming an ILD layer over the silicon liner, which includes elemental silicon, introducing a dopant species to the ILD layer, and subsequently removing the dummy gate structure to form a gate trench. Thereafter, the method proceeds to performing a thermal treatment to the doped ILD layer, thereby oxidizing the silicon liner, and forming a metal gate stack in the gate trench and over the oxidized silicon liner.

A substrate includes a metal component on a surface. A polymeric layer is deposited on the surface using molecular layer deposition. The polymeric layer includes a metalcone and has a thickness from 1 nm to 20 nm. The polymeric layer is stable at room temperature, but will undergo a structural change at high temperatures. The polymeric layer can be annealed to cause a structural change, which can occur during soldering.

Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

A method for manufacturing a display module includes preparing a display module comprising a plurality of layers and forming a through-hole in the display module. The forming the through-hole includes performing a first irradiation process of irradiating a first laser beam along a first boundary defining the through-hole, performing a second irradiation process of irradiating a second laser beam along a second boundary after the first irradiation process, and performing a third irradiation process of irradiating a third laser beam along a third boundary after the second irradiation process. A time interval between the first irradiation process and the second irradiation process may be different from a time interval between the second irradiation process and the third irradiation process.

Methods for inducing reversible or permanent conductivity in wide band gap metal oxides such as Ga.sub.2O.sub.3, using light without doping, as well as related compositions and devices, are described.