A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

A semiconductor structure is provided. The semiconductor structure includes an insulator layer, first and second field-effect transistor devices, an isolation field-effect transistor device, front-side gate and back-side gate contacts. Each of the first and second field-effect transistor devices and the isolation field-effect transistor device includes a fin structure and first and second epitaxial source/drain structures. The fin structure includes channel layers and a gate structure that is wrapped around the channel layers. The first and second epitaxial source/drain structures are connected to opposite sides of the channel layers. The isolation field-effect transistor device is kept in the off-state. The front-side gate contact is formed on the first field-effect transistor device and electrically connected to the gate structure of the first field-effect transistor device. The back-side gate contact is formed passing through the insulator layer and electrically connected to the gate structure of the isolation field-effect transistor device.

A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

Examples of an integrated circuit with a gate structure and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate having a channel region. A gate dielectric is formed on the channel region, and a layer containing a dopant is formed on the gate dielectric. The workpiece is annealed to transfer the dopant to the gate dielectric, and the layer is removed after the annealing. In some such examples, after the layer is removed, a work function layer is formed on the gate dielectric and a fill material is formed on the work function layer to form a gate structure.

The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

A method for forming a semiconductor memory structure includes forming a hard mask layer over a semiconductor substrate, etching the hard mask layer to form first mask patterns and second mask patterns, transferring the first and second mask patterns to the substrate to form semiconductor blocks, and thinning down the second mask element. After thinning down the second mask element, the thickness of the second mask elements is less than the thickness of the first mask elements. The method also includes forming a first capping layer to laterally extend over the first mask patterns and the second mask patterns, and etching the first capping layer and the second mask pattern to form contact openings.

A substrate intermediary body includes: a substrate having a hole in a thickness direction, and a conductor being disposed in the hole; and an adhesion layer formed on a wall surface of the hole. The adhesion layer contains a reaction product of a polymer (A) having a cationic functional group and having a weight-average molecular weight of from 2,000 to 1,000,000 and a polyvalent carboxylic acid compound (B) having two or more carboxyl groups per molecule or a derivative thereof.