A method of transferring a thin film from a substrate to a flexible support that includes transfer of the flexible support by a layer of polymer, crosslinkable under ultraviolet light, directly on the thin film, the adhesion energy of the polymer evolving according to its degree of crosslinking, decreasing to an energy point d minimum adhesion achieved for a nominal crosslinking rate, then increasing for a crosslinking rate greater than the nominal crosslinking rate, then apply, on the polymer layer, an ultraviolet exposure parameterized so as to stiffen the polymer layer and have an adhesion energy between the thin film and the flexible support greater than an adhesion energy between the thin film and the substrate, then remove the substrate.

A display panel and a manufacture method thereof, and a display apparatus are provided. The display panel includes a first substrate and a second substrate which arranged opposite to each other. The first substrate includes a display region and a peripheral region, a conduction section is in the peripheral region of the first substrate, and the conduction section is electrically connected with a grounded section. The second substrate includes a display region and a peripheral region, a black matrix is at least in the peripheral region of the second substrate, and the black matrix is electrically connected with the conduction section.

Embodiments of the present disclosure describe light emitting displays having a light emitter layer that includes an array of light emitters and a wafer having a driving circuit coupled with the light emitter layer, computing devices incorporating the light emitting displays, methods for formation of the light emitting displays, and associated configurations. A light emitting display may include a light emitter layer that includes an array of light emitters and a wafer coupled with the light emitter layer, where the wafer includes a driving circuit formed thereon to drive the light emitters. Other embodiments may be described and/or claimed.

A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.

Embodiments of the present disclosure describe light emitting displays having a light emitter layer that includes an array of light emitters and a wafer having a driving circuit coupled with the light emitter layer, computing devices incorporating the light emitting displays, methods for formation of the light emitting displays, and associated configurations. A light emitting display may include a light emitter layer that includes an array of light emitters and a wafer coupled with the light emitter layer, where the wafer includes a driving circuit formed thereon to drive the light emitters. Other embodiments may be described and/or claimed.

A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

A display panel and a manufacture method thereof, and a display apparatus are provided. The display panel includes a first substrate and a second substrate which arranged opposite to each other. The first substrate includes a display region and a peripheral region, a conduction section is in the peripheral region of the first substrate, and the conduction section is electrically connected with a grounded section. The second substrate includes a display region and a peripheral region, a black matrix is at least in the peripheral region of the second substrate, and the black matrix is electrically connected with the conduction section.

A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.

A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.