A method for manufacturing a semiconductor structure is provided. The method includes a III-V semiconductor device in a first region of a base substrate and a further device in a second region of the base substrate. The method includes: (a) obtaining a base substrate comprising the first region and the second region, different from the first region; (b) providing a buffer layer over a surface of the base substrate at least in the first region, wherein the buffer layer comprises at least one monolayer of a first two-dimensional layered crystal material; (c) forming, over the buffer layer in the first region, and not in the second region, a III-V semiconductor material; and (d) forming, in the second region, at least part of the further device. A semiconductor structure is also provided.

The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al.sub.2O.sub.3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO.sub.2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS.sub.2) substrate.

A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

A method for producing a transition metal dichalcogenide-graphene heterojunction composite, the method includes: transferring a graphene onto a flexile substrate; depositing a transition metal layer on the flexible substrate onto which the graphene has been transferred; and injecting a gas containing plasma-treated sulfur (S) onto the flexile substrate onto which the transition metal layer has been deposited, is disclosed.

In certain examples, methods and semiconductor structures are directed to a method comprising steps of forming by monolithically integrating or seeding via polycrystalline diamond (PCD) particles on a GaN-based layer characterized as including GaN in at least a surface region of the GaN-based layer. After the step of seeding, the PCD particles are grown under a selected pressure to form a diamond layer section and to provide a semi-conductive structure that includes the diamond layer section integrated on or against the surface region of the GaN-based layer.

A composition of matter comprising: a plurality of group III-V nanowires or nanopyramids epitaxially grown on a polycrystalline or single-crystalline graphene layer, said graphene layer being directly supported on a crystalline substrate such as a group III-V semiconductor, sapphire, SiC or diamond substrate, wherein the epitaxy, crystal orientation and facet orientations of said nanowires or nanopyramids are directed by the crystalline substrate.

A nitride semiconductor device includes: a diamond substrate; a first graphene layer provided on the diamond substrate; a second graphene layer provided on the first graphene layer; a nitride semiconductor layer provided on the second graphene layer; and a nitride semiconductor element having an electrode provided on the nitride semiconductor layer, wherein the first and second graphene layers are provided as an interface layer between the diamond substrate and the nitride semiconductor layer.

A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.

Epitaxial growth of materials, and related systems and articles, are generally described.