A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate.

A method for producing a substantially planar surface for semiconductor processing to improve lithography, planarization, and other process steps that benefit from a flat substrate. The method includes depositing a first alloy to form a first layer on a substrate. The first layer has a center high deposition, meaning the height in the center of the substrate is higher than the height at the edges of the substrate. The method further includes depositing a second alloy on the first layer to form a second layer. The first alloy has a different composition than the second alloy. In such a method the net deposition is substantially planar reducing or eliminating deposition induced long-range distortions that might occur across a substrate.

A method of forming a fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, including forming a dummy fin trench within a perimeter of a fin pattern region on a substrate, forming a dummy fin fill in the dummy fin trench, forming a plurality of vertical fins within the perimeter of the fin pattern region, including border fins at the perimeter of the fin pattern region and interior fins located within the perimeter and inside the bounds of the border fins, wherein the border fins are formed from the dummy fin fill, and removing the border fins, wherein the border fins are dummy fins and the interior fins are active vertical fins.

The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element is disposed and which is made of a ceramic material; a shaft which has a tubular shape with a through-hole and is coupled to the bottom surface of the heater plate and in which a rod for supplying power to the heating element through the through-hole is received; and a continuous or discontinuous air pocket which is provided in a joint with which the heater plate and the shaft come into contact and by which the heater plate and the shaft are coupled to each other, wherein the air pocket is formed along the joining surface of the joint.

A unit sorting system comprising: a net table for receiving units and a unit lifter for depositing said units on the net table; the net table having a first and second zone; wherein the unit lifter is arranged to engage a batch of units and then deposit a first half of the batch to the first zone and deposit a first half of the batch to the second zone.

Disclosed are an apparatus and a method for liquid-treating a substrate. An apparatus for treating a substrate includes a liquid treatment chamber that supplies a liquid onto the substrate to liquid-treat the substrate, a drying chamber that removes the remained liquid on the substrate, and a transfer unit that transfers the substrate between the liquid treatment chamber and the drying chamber, wherein the transfer unit includes a hand that supports the substrate, and a weight measuring unit that measures a weight of the remained liquid on the substrate. A weight of a remained liquid on a substrate may be measured by measuring a weight of the substrate while the substrate is transferred.

A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.

The present invention discloses a method for preparing a bifacial PERC solar cell. The present invention has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Systems and methods for forming a low contact resistance nanowire transistor are described. The transistor includes a gate formed over a substrate including a gate conductor. Gate spacers are formed on sides of the gate. At least one semiconductor nanowire is formed through the gate such that the at least one semiconductor nanowire extends through the gate conductor and the gate spacers and into source and drain regions grown from surfaces of the at least one semiconductor nanowire adjacent to sides of the gate to increase the surface area of the source drain region contacting the semiconductor nanowire.

A substrate processing system includes: a substrate transfer device; processing units each having a substrate holding mechanism for rotatably holding a substrate received from the substrate transfer device and a processing fluid supply part for supplying a processing fluid to the substrate; and a controller for controlling the substrate transfer device and the processing units according to processing recipe information so as to execute the substrate processing process. When an abnormality in a certain unit of the processing units occurs in the substrate processing process for the substrate to be processed, the controller controls the substrate transfer device and a relief processing unit according to complementary recipe information so that the complementary processing process for a relief substrate is executed in the relief processing unit by transferring the relief substrate to the relief processing unit different from the certain processing unit.