A method for planarizing a wafer surface comprising: providing a first wafer and a second wafer, oxidizing the first wafer to form an oxide layer on a surface of the first wafer, injecting a foaming ion to form a peeling layer in the first wafer, bonding the first wafer and the second wafer to form a bonded wafer by using the oxide layer as an intermediate layer, raising a temperature to cause the bonded wafer to crack in the peeling layer, a portion of the first wafer remaining on the surface of the oxide layer being a top silicon layer, and the oxide layer being an insulating buried layer, etching a surface of the top silicon layer with a mixed gas of hydrogen and HCl, wherein the mixed gas is injected from a side of the wafer, wherein a flow rate of the mixed gas in an edge region is less than a flow rate of the mixed gas in a central region.

The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.

A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200? C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15? C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600? C. and not more than 950? C., and a process of cooling the stacked body from the bonding temperature to 200? C. at an average temperature lowering rate of the stacked body of not less than 15? C./min. A ceramic substrate is favorably a silicon nitride substrate.

The present disclosure provides a method for processing a photoresist component, including steps of: placing a photoresist component to be processed on a heating device comprising a plurality of heating components; and controlling, based on a heating parameter, each of the plurality of heating components associated with the heating parameter to heat the photoresist component to be processed. The heating parameter is determined based on a photoresist component parameter of the photoresist component to be processed and a process parameter of forming the photoresist component. The present disclosure further provides a device for processing a photoresist component.

The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.

The present disclosure provides a method for processing a photoresist component, including steps of: placing a photoresist component to be processed on a heating device comprising a plurality of heating components; and controlling, based on a heating parameter, each of the plurality of heating components associated with the heating parameter to heat the photoresist component to be processed. The heating parameter is determined based on a photoresist component parameter of the photoresist component to be processed and a process parameter of forming the photoresist component. The present disclosure further provides a device for processing a photoresist component.