The invention provides an optical heating device and method of heating treatment capable of adjusting the illuminance distribution on the main surface of a substrate to be treated more precisely. An optical heating device that heats a substrate to be treated by irradiating light, the optical heating device includes; a support member supporting the substrate to be treated; and a light source unit including a plurality of LED substrates each having a first main surface on which a plurality of LED elements are mounted; in which at least one of the plurality of LED substrates is arranged such that the first main surface is inclined to the second main surface of the substrate to be treated when the substrate to be treated is supported by the support member.

A substrate support device relating to technology disclosed in the description of the present application includes: a holding plate for opposing a substrate bowable by being heated by irradiation with flash light; and a plurality of substrate support pins provided on the holding plate and being for supporting the substrate, wherein the plurality of substrate support pins are arranged at locations where a volume of a space between the holding plate and the substrate in an unbowed state and a volume of a space between the holding plate and the substrate in a bowed state are equal to each other. Breakage of the substrate can be suppressed in a case where the substrate is bowed by flash light.

The present disclosure describes a method for controlling radiation conditions and an example system for performing the method. The method includes sending a first setting to configure a radiation device to provide radiation to a substrate undergoing a process operation in a process chamber of the radiation device. The method further includes receiving radiation energy data measured at a plurality of locations of the process chamber and receiving measurement data measured on the substrate during the process operation. The method further includes in response to a variance of the radiation energy data being above a first predetermined threshold and in response to a difference between reference data and the measurement data being above a second predetermined threshold, sending a second setting to configure the radiation device to provide radiation to the substrate.

A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5σ from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5σ from the total average thereof of the plurality of semiconductor wafers.

There is provided a technique capable of stably form the film on a substrate regardless of machine difference or processing conditions. According to an aspect of the present disclosure, there is provided a technique that includes: (a) setting correction coefficients for correcting an output level of microwave; (b) storing correction tables containing the correction coefficients set in (a); (c) acquiring one or more correction coefficients from at least one correction table periodically from a start of outputting of the microwave; (d) calculating a correction value for an output preset level of the microwave from the one or more correction coefficients acquired in (c); (e) correcting the output preset level of the microwave by using the correction value calculated in (d); and (f) processing a substrate by supplying the microwave into a process chamber with the output preset level of the microwave corrected in (e).

A method for manufacturing a structured substrate provided with a trap-rich layer whereon rests a stack consisting of an insulating layer and of a layer of single-crystal material, includes forming an amorphous silicon layer on a front face of a silicon substrate and heat treating intended to convert the amorphous silicon layer into a trap-rich layer made of single-crystal silicon grains. The heat treatment conditions in terms of duration and of temperature are adjusted to limit the grains to a size less than 200 nm. The method also includes overlapping the trap-rich layer with an insulating layer and a layer of single-crystal material.

In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

An apparatus for semiconductor wafer treatment includes a wafer holding unit configured to receive a single wafer, at least a solution supply unit configured to apply a solution onto the wafer and an irradiation unit configured to emit irradiation to the wafer. The irradiation unit further includes at least a plurality of first light sources configured to emit irradiation in FIR range and a plurality of second light sources configured to emit irradiation in UV range.