A method for manufacturing a bonded substrate, the method includes: bonding a first mother substrate including a first substrate and a second mother substrate including a second substrate to form a bonded mother substrate; cutting off a part of the first mother substrate along a dividing line of the bonded mother substrate to form a cutoff portion; dividing the bonded mother substrate along the dividing line; separating a bonded substrate from the bonded mother substrate, the bonded substrate including the first substrate and the second substrate bonded to the first substrate; forming a contact terminal on an end portion of the first mother substrate, the contact terminal contactable with an external terminal; forming a communication path between the first mother substrate and the second mother substrate along the dividing line.

A method for manufacturing a bonded substrate, the method includes: bonding a first mother substrate including a first substrate and a second mother substrate including a second substrate to form a bonded mother substrate; cutting off a part of the first mother substrate along a dividing line of the bonded mother substrate to form a cutoff portion; dividing the bonded mother substrate along the dividing line; separating a bonded substrate from the bonded mother substrate, the bonded substrate including the first substrate and the second substrate bonded to the first substrate; forming a contact terminal on an end portion of the first mother substrate, the contact terminal contactable with an external terminal; forming a communication path between the first mother substrate and the second mother substrate along the dividing line.

A method for processing semiconductor wafers includes obtaining measurement data from a surface of a semiconductor wafer processed by a front-end process tool. The method includes determining a center plane of the wafer based on the measurement data, generating raw shape profiles, and generating ideal shape profiles. The method further includes generating Gapi profiles based on the raw shape profiles and the ideal shape profiles, and calculating a Gapi value of the semiconductor wafer based on the Gapi profiles. The generated Gapi profiles and/or the calculated Gapi value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

A method for processing semiconductor wafers includes obtaining measurement data from a surface of a semiconductor wafer processed by a front-end process tool. The method includes determining a center plane of the wafer based on the measurement data, generating raw shape profiles, and generating ideal shape profiles. The method further includes generating Gapi profiles based on the raw shape profiles and the ideal shape profiles, and calculating a Gapi value of the semiconductor wafer based on the Gapi profiles. The generated Gapi profiles and/or the calculated Gapi value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

A method for processing semiconductor wafers includes obtaining measurement data of an edge profile of a semiconductor wafer processed by a front-end process tool. The method includes determining an edge profile center point based on the measurement data, generating a raw height profile, and generating an ideal edge profile. The method further includes generating a Gapi edge profile of the semiconductor wafer based on the raw height profile and the ideal edge profile and calculating a Gapi edge value of the semiconductor wafer based on the Gapi edge profile. The generated Gapi edge profile and/or the calculated Gapi edge value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

A first peel-off layer extending along a side surface of a truncated cone that has a first bottom surface positioned near a face side of a wafer and a second bottom surface positioned within the wafer and smaller in diameter than the first bottom surface, and a second peel-off layer extending along the second bottom surface of the truncated cone are formed in the wafer. Then, external forces are exerted on the wafer thicknesswise of the wafer, thereby dividing the wafer along the first peel-off layer and the second peel-off layer that function as division initiating points.

A first peel-off layer extending along a side surface of a truncated cone that has a first bottom surface positioned near a face side of a wafer and a second bottom surface positioned within the wafer and smaller in diameter than the first bottom surface, and a second peel-off layer extending along the second bottom surface of the truncated cone are formed in the wafer. Then, external forces are exerted on the wafer thicknesswise of the wafer, thereby dividing the wafer along the first peel-off layer and the second peel-off layer that function as division initiating points.

A wafer producing method includes a peel-off layer forming step of forming a peel-off layer by positioning a focused spot of a laser beam having a wavelength transmittable through an ingot to a depth corresponding to a thickness of the wafer to be produced from the ingot from a first end surface of the ingot and applying the laser beam to the ingot, a first chamfered portion forming step of forming a first chamfered portion by applying, from the first end surface side to a peripheral surplus region of the wafer, a laser beam having a wavelength absorbable by the wafer, a peeling-off step of peeling off the wafer to be produced, and a second chamfered portion forming step of forming a second chamfered portion by applying, from a peel-off surface side of the wafer, the laser beam having a wavelength absorbable by the wafer.

A wafer producing method includes a peel-off layer forming step of forming a peel-off layer by positioning a focused spot of a laser beam having a wavelength transmittable through an ingot to a depth corresponding to a thickness of the wafer to be produced from the ingot from a first end surface of the ingot and applying the laser beam to the ingot, a first chamfered portion forming step of forming a first chamfered portion by applying, from the first end surface side to a peripheral surplus region of the wafer, a laser beam having a wavelength absorbable by the wafer, a peeling-off step of peeling off the wafer to be produced, and a second chamfered portion forming step of forming a second chamfered portion by applying, from a peel-off surface side of the wafer, the laser beam having a wavelength absorbable by the wafer.

Provided are a polishing device including: a surface plate; a polishing pad mounted on the surface plate; a carrier for accommodating a polishing object; and a slurry supply unit including at least one nozzle, wherein the carrier performs a vibrating motion in a trajectory from the center of the surface plate to the end of the surface plate, and the slurry supply unit performs a vibrating motion at the same trajectory and speed as those of the vibrating motion of the carrier, as a polishing device which includes a slurry supply unit enabling subdivided driving in the supply of a polishing slurry, and in which the driving of the slurry supply unit has an advantage enabling optimized driving in an organic relationship between rotation and/or vibrating motion of the carrier and the surface plate and vertical pressurization conditions, etc. for the polishing surface of the carrier.