Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium-containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and etching through the backside metal layer located in the die street of the substrate. The substrate may be exposed through the etch. The method may also include singulating the plurality of die included in the substrate through removing a substrate material in the die street.

There is provided a technique that includes: (a) supplying a molybdenumcontaining gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.

A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.

An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated from a second process gas comprising tungsten; and (d) etching the recess with a third plasma generated from a third process gas.

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

The present disclosure relates to a wafer, a manufacturing method thereof, and a semiconductor device. The wafer manufacturing method includes: providing a wafer having a scribe lane for die cutting. A plurality of scribe-lane through-silicon-vias is formed at the scribe lane, and the scribe-lane through-silicon-vias are filled with a protective material to form the scribe lane. Through the technique of forming through-silicon vias at the scribe lane and filling them with protective materials, performing cutting along the line of the scribe-lane through-silicon-vias during wafer scribing, the cutting stress is reduced so and damage to the die area is prevented. The scribe-lane through-silicon-vias can effectively reduce the scribe lane width, which is conducive to miniaturizing the scribe lane and improving the effective utilization of wafers.

There is provided a technique that includes: (a) adjusting a temperature of a substrate to a first temperature; (b) forming a first molybdenum-containing film on the substrate by performing: (b1) supplying a molybdenum-containing gas to the substrate; and (b2) supplying a reducing gas to the substrate for a first time duration; (c) adjusting the temperature of the substrate to a second temperature after performing (b); and (d) forming a second molybdenum-containing film on the first molybdenum-containing film by performing: (d1) supplying the molybdenum-containing gas to the substrate; and (d2) supplying the reducing gas to the substrate for a second time duration.

A method for fabricating a semiconductor package includes: providing a semiconductor wafer having opposing first and second sides, the semiconductor wafer being arranged on a first carrier such that the second side of the wafer faces the carrier; masking sawing lines on the first side of the semiconductor wafer with a mask; depositing a first metal layer on the masked first side of the semiconductor wafer by cold spraying or by high velocity oxygen fuel spraying or by cold plasma assisted deposition, such that the first metal layer does not cover the sawing lines, the deposited first metal layer having a thickness of 50 μm or more; singulating the semiconductor wafer into a plurality of semiconductor dies by sawing the semiconductor wafer along the sawing lines; and encapsulating the plurality of semiconductor dies with an encapsulant such that the first metal layer is exposed on a first side of the encapsulant.