The invention relates to a method for manufacturing a semiconductor-on-insulator structure (10), comprising the following steps: —providing an FD-SOI substrate (1) comprising, successively from its base to its top: a monocrystalline substrate (2) having an electrical resistivity of between 500 Ω.Math.cm and 30 kΩ.Math.cm, an interstitial oxygen content (Oi) of between 20 and 40 old ppma, and having an N- or P-type doping, an electrically insulating layer (3) having a thickness of between 20 nm and 400 nm, a monocrystalline layer (4) having a P-type doping, —heat-treating the FD-SOI substrate (1) at a temperature greater than or equal to 1175° C. for a time greater than or equal to 1 hour in order to form a P-N junction (5) in the substrate. The invention also relates to such a semiconductor-on-insulator structure.

A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.

A plurality of substrate support parts provided on a susceptor each have an outer circumferential surface such that a plane parallel to a holding surface of a holding plate is formed on a top portion of a spherical surface. Even if a semiconductor wafer irradiated with flash light abruptly warps such that its front surface becomes raised, a back surface of the semiconductor wafer can smoothly rub against the plurality of substrate support parts. This can prevent chipping and breakage of the substrate support parts, and can also prevent scratches on the back surface of the semiconductor wafer. The substrate support parts having the outer circumferential surface of the above-mentioned shape can be located in any directions on the holding plate, thereby facilitating manufacturing, inspection, and management of the susceptor relating to the substrate support parts.

A method of manufacturing a device in a semiconductor body includes forming a first field stop zone portion of a first conductivity type and a drift zone of the first conductivity type on the first field stop zone portion. An average doping concentration of the drift zone is smaller than 80% of that of the first field stop zone portion. The semiconductor body is processed at a first surface and thinned by removing material from a second surface. A second field stop zone portion of the first conductivity type is formed by implanting protons at one or more energies through the second surface. A deepest end-of-range peak of the protons is set in the first field stop zone portion at a vertical distance to a transition between the drift zone and first field stop zone portion in a range from 3 μm to 60 μm. The semiconductor body is annealed.

A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.

A method of forming a silicon-germanium heterojunction bipolar transistor (hbt) device is provided. The method includes forming a stack of four doped semiconductor layers on a semiconductor substrate. The method further includes forming a dummy emitter contact and contact spacers on a fourth doped semiconductor layer of the stack of four doped semiconductor layers, and removing portions of the second, third, and fourth semiconductor layers to form a vertical fin. The method further includes recessing the second and fourth doped semiconductor layers, and depositing a condensation layer on the second, third, and fourth doped semiconductor layers. The method further includes reacting the condensation layer with the third doped semiconductor layer to form a protective segment on a condensed protruding portion.

A method of forming a silicon-germanium heterojunction bipolar transistor (hbt) device is provided. The method includes forming a stack of four doped semiconductor layers on a semiconductor substrate. The method further includes forming a dummy emitter contact and contact spacers on a fourth doped semiconductor layer of the stack of four doped semiconductor layers, and removing portions of the second, third, and fourth semiconductor layers to form a vertical fin. The method further includes recessing the second and fourth doped semiconductor layers, and depositing a condensation layer on the second, third, and fourth doped semiconductor layers. The method further includes reacting the condensation layer with the third doped semiconductor layer to form a protective segment on a condensed protruding portion.

A plurality of substrate support parts provided on a susceptor each have an outer circumferential surface such that a plane parallel to a holding surface of a holding plate is formed on a top portion of a spherical surface. Even if a semiconductor wafer irradiated with flash light abruptly warps such that its front surface becomes raised, a back surface of the semiconductor wafer can smoothly rub against the plurality of substrate support parts. This can prevent chipping and breakage of the substrate support parts, and can also prevent scratches on the back surface of the semiconductor wafer. The substrate support parts having the outer circumferential surface of the above-mentioned shape can be located in any directions on the holding plate, thereby facilitating manufacturing, inspection, and management of the susceptor relating to the substrate support parts.

A method of manufacturing a device in a semiconductor body includes forming a first field stop zone portion of a first conductivity type and a drift zone of the first conductivity type on the first field stop zone portion. An average doping concentration of the drift zone is smaller than 80% of that of the first field stop zone portion. The semiconductor body is processed at a first surface and thinned by removing material from a second surface. A second field stop zone portion of the first conductivity type is formed by implanting protons at one or more energies through the second surface. A deepest end-of-range peak of the protons is set in the first field stop zone portion at a vertical distance to a transition between the drift zone and first field stop zone portion in a range from 3 m to 60 m. The semiconductor body is annealed.

A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.