A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

A method for manufacturing a semiconductor device, includes: applying a laser beam to a plane extending at a predetermined depth in a semiconductor substrate from a second main surface side of the semiconductor substrate opposite to a first main surface side on which a device structure including a channel is formed; and peeling off a device layer including the device structure from the semiconductor substrate along the plane applied with the laser beam. In the applying of the laser beam, the laser beam is applied so that a power density is lower in a region corresponding to the channel in a thickness direction of the semiconductor substrate than in the other region, in the plane extending at the predetermined depth in the semiconductor substrate.

A method for manufacturing a semiconductor device, includes: applying a laser beam to a plane extending at a predetermined depth in a semiconductor substrate from a second main surface side of the semiconductor substrate opposite to a first main surface side on which a device structure including a channel is formed; and peeling off a device layer including the device structure from the semiconductor substrate along the plane applied with the laser beam. In the applying of the laser beam, the laser beam is applied so that a power density is lower in a region corresponding to the channel in a thickness direction of the semiconductor substrate than in the other region, in the plane extending at the predetermined depth in the semiconductor substrate.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a second oxide provided over the first oxide and being in contact with the side surface of the first conductor and the side surface of the second conductor; a third oxide provided over the second oxide and including regions in contact with the side surface of the first insulator and the side surface of the second insulator; a third insulator over the third oxide; and a third conductor over the third insulator.

A dividing method of a substrate includes a close contact step of bringing an expanding tape into close contact with a substrate after execution of a modified layer forming step and before execution of a chip interval expansion step. Therefore, when the expanding tape is expanded in the chip interval expansion step, it is possible to favorably form plural chips with use of modified layers as the origin and to favorably widen the interval between the plural chips.

A dividing method of a substrate includes a close contact step of bringing an expanding tape into close contact with a substrate after execution of a modified layer forming step and before execution of a chip interval expansion step. Therefore, when the expanding tape is expanded in the chip interval expansion step, it is possible to favorably form plural chips with use of modified layers as the origin and to favorably widen the interval between the plural chips.

A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.