A low temperature co-fired ceramic (LTCC) electronic device includes a template layer, a base layer and a conductor. The template layer and the base layer are ceramic layers. The template layer has an electrode pattern formed by a hollow groove. A depth of the hollow groove is between 10 μm and 120 μm, and a width of the hollow groove is above 80 μm. The base layer is closely overlapped with the template layer. An overlapping area range of the base layer and the template layer at least covers the electrode pattern. The conductor is filled in the hollow groove of the electrode pattern. A filling thickness of the conductor is above 10 μm.

One or more implementations of the subject technology may enable a bond-on-pad (BoP) substrate technology that can eliminate the need to utilize a solder-on-pad (SoP) process. Unlike an SoP process, a BoP Process does not require a solder bump to be formed on a bump pad to attach a joint to a bump pad. The size of an opening on a bump pad for a BoP process may be larger than that of an SoP process. A BoP process may use a solder mask having multiple thicknesses and may be thinner near the bump pads. A BoP process may use a joint having a copper pillar and a solder cap. A BoP process can be used with an underfill or a molding compound technology.

To provide a wiring substrate, an electronic device, and an electronic module the size of which can be easily reduced and the strength of which can be maintained. A wiring substrate includes an insulation substrate and an electrical wiring structure. The insulation substrate includes a recess section in one surface. A frame portion of the insulation substrate that forms a side surface which connects an opened surface and a bottom surface of the recess section to each other includes a first conductive portion having a plate shape in the frame portion.

A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

An electronic package includes an electronic component including terminals, a plurality of leads, at least some of the leads being electrically coupled to the terminals within the electronic package, and a mold compound covering the electronic component and partially covering the leads. Each of the leads include an exposed bottom face coplanar with a bottom surface of the mold compound and an exposed end face coplanar with one of a plurality of side surfaces of the mold compound. For at least some of the leads, the exposed end face includes a narrow portion forming a concave recess, the narrow portion being between top and bottom edges of the exposed end face.

Techniques for fabricating a cored or coreless semiconductor package having one or more magnetic bilayer structures embedded therein are described. A magnetic bilayer structure includes a magnetic layer and a dielectric layer. For one technique, fabricating a cored or coreless semiconductor package includes: depositing a seed layer on a build-up layer; forming a raised pad structure and a trace on the seed layer; removing one or more uncovered portions of the seed layer to uncover top surfaces of one or more portions of the build-up layer; applying a magnetic bilayer structure on the raised pad structure, the trace, any unremoved portion of the seed layer, and the top surfaces of the one or more portions of the build-up layer, the magnetic bilayer structure comprises a magnetic layer and a dielectric layer; and forming a conductive structure on the raised pad structure. Other techniques are also described.

An electronic device includes a substrate having a surface, functional metallic traces on a first portion of the surface that are electrically connected to carry current in the electronic device and have a first density, and dummy metallic traces on a second portion of the surface that are electrically isolated from the functional metallic traces and have a second density that is within at least 50% of the first density.

The present invention relates to electrical interconnect structures formed from a lithographically defined polymer coating in conjunction with a conductive paste, and methods for forming same.

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.