Disclosed is a superjunction semiconductor device and a method for manufacturing the same and, more particularly, to a superjunction semiconductor device and a method for manufacturing the same seeking to improve on-resistance characteristics of the device without degrading breakdown voltage characteristics by forming a second conductivity type impurity region on and/or in a surface of a substrate in a cell region C to increase a second conductivity type impurity concentration in the device.

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.

A semiconductor device is provided that includes a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p− region. A first space charge region and a second space charge region are formed within the p− region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region.

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.

A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.

A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.

A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.

A semiconductor device is provided that includes a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p? region. A first space charge region and a second space charge region are formed within the p? region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region.

A high voltage (HV) transistor is integrated on a silicon-on-insulator (SOI) substrate. The HV transistor is disposed in a HV device region disposed on a bulk substrate of the SOI substrate. The HV device region includes a top field oxide which includes at least a part of a buried oxide (BOX) of the SOI substrate. A HV gate is disposed in HV region overlapping the HV top field oxide and includes first and second HV gate sidewalls. A drain is disposed on the bulk substrate and displaced from the first HV gate sidewall by the HV top field oxide. A source is disposed on the bulk substrate adjacent to the side of the second HV gate sidewall.