A substrate dividing method includes preparing a substrate that is formed with division start points along streets and that has a protective sheet attached to a surface on one side thereof and rolling a roller on a surface on the other side of the substrate, to attach an expanding tape. Next, suction by a holding table is cancelled, and, in a state in which a slight gap is formed between a holding surface of the holding table and the protective sheet, the roller is brought into contact with the expanding tape and rolled, thereby extending cracks extending from the division start points while causing the substrate to sink into the gap through the protective sheet with the division start points as starting points, and the expanding tape is expanded to widen the chip intervals with the division start points as starting points.

A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.

A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

A display substrate including a base substrate having a display area and a non-display area around the display area, a plurality of gate lines disposed in the display area and extending in a first direction, a plurality of data lines disposed in the display area, insulated from the gate lines, and extending in a second direction crossing the first direction, and a plurality of data line extension portions extending from the data lines to the non-display area, in which each of the data line extension portions includes a first portion and a second portion disposed at a higher position than the first portion.

In a method for increasing the electrical functionality, and/or service life, of power electronic modules, the power electronic circuit carrier, and/or the metallisation applied onto the power electronic circuit carrier, and/or a base plate connected, or to be connected, to a rear face of the power electronic circuit carrier, is finely structured by means of local material removal with at least one laser beam, so as to reduce thermomechanical stresses occurring during the production or operation of the module. In an alternative form of embodiment, the metallisation applied onto the front face of the power electronic circuit carrier is structured, or an already created structure is refined or supplemented, by means of local material removal with laser radiation, so as to achieve a prescribed electrical functionality of the metallisation.

An array substrate, a display device, and a method for repairing a broken wire of an array substrate are disclosed. The array substrate includes a substrate, a plurality of sub-pixel units on the substrate, and a wire and a first conductive light-blocking pattern between two adjacent sub-pixel units of the plurality of sub-pixel units. The first conductive light-blocking pattern is electrically insulated from the wire, and the first conductive light-blocking pattern includes two first regions. Orthographic projections of the two first regions on the substrate overlap with an orthographic projection of the wire on the substrate.

A method for repairing a substrate and an electronic device are disclosed, wherein the electronic device includes: a substrate; a patterned metal layer disposed on the substrate, and the patterned metal layer including a first metal section and a second metal section which is disconnected to the first metal section, wherein at least one of the first metal section and the second metal section has a through hole; and a first conductive layer electrically connected to one of the first metal section and the second section by the through hole; wherein the first conductive layer has a protrusion, the protrusion locating outside the through hole.

Disclosed are a method and a device for repairing a circuit on an array substrate, and an array substrate. The method includes: determining a section to be repaired on each signal line; applying a conductive material to form a repair line between two ends of the section to be repaired, the repair line being connected with two ends of the section to be repaired; and applying an insulating material to form a cover layer above the repair line, the cover layer completely covers the surface of the repair line.

A processing method of a wafer includes a modified layer forming step of positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the wafer to the inside of a planned dividing line and executing irradiation along the planned dividing line to form modified layers inside and a water-soluble resin coating step of coating the front surface of the wafer with a water-soluble resin before or after the modified layer forming step. The processing method also includes a dividing step of expanding a dicing tape to divide the wafer into individual device chips together with the water-soluble resin with which the front surface of the wafer is coated and a modified layer removal step of executing plasma etching and removing the modified layers that remain at the side surfaces of the device chips in a state in which the dicing tape is expanded and the front surfaces of the individual device chips are coated with the water-soluble resin.