A semiconductor device assembly including a substrate, a semiconductor device, a stiffener member, and mold compound. The stiffener member is tuned, or configured, to reduce and/or control the shape of warpage of the semiconductor device assembly at an elevated temperature. The stiffener member may be placed on the substrate, on the semiconductor device, and/or on the mold compound. A plurality of stiffener members may be used. The stiffener members may be positioned in a predetermined pattern on a component of the semiconductor device assembly. A stiffener member may be used so that the warpage of a first semiconductor device substantially corresponds to the warpage of a second semiconductor device at an elevated temperature. The stiffener member may be tuned by providing the member with a desired coefficient of thermal expansion (CTE). The desired CTE may be based on the individual CTEs of the components of a semiconductor device assembly.

A method of determining a bonding status between a wire and at least one bonding location of a workpiece is provided. The method includes the steps of: (a) bonding a portion of a wire to a bonding location of a workpiece using a bonding tool of a wire bonding machine; (b) determining a motion profile of the bonding tool for determining if the portion of the wire is bonded to the bonding location, the motion profile being configured to result in the wire being broken during the motion profile if the portion of the wire is not bonded to the bonding location; and (c) moving the bonding tool along the motion profile to determine if the portion of the wire is bonded to the bonding location. Other methods of determining a bonding status between a wire and at least one bonding location of a workpiece are also provided.

An optical probe includes a core part and a clad part arranged along an outer circumference of the core part, and has an incident surface having a radius of curvature R through which an optical signal enters. The radius of curvature R and a central half angle ω at an incident point of the optical signal on the incident surface fulfil the following formulae using a radiation angle γ of the optical signal, an effective incident radius Se of the optical signal transmitted in the core part without penetrating into the clad part on the incident surface, a refractive index n(r) of the core part at the incident point, and a refracting angle β at the incident point:

R=Se/sin(ω)

ω=±sin.sup.−1{[K2.sup.2/(K1.sup.2+K2.sup.2)].sup.1/2}

where K1=n(r)×cos(β)−cos(γ/2) and K2=n(r)×sin(β)−sin(γ/2).

In a side view, when an angle θ1 formed between the light axis of light incident on a surface of a silicon wafer and the surface (or an imaginary plane corresponding to the surface) is 67° to 78° and an angle formed between the surface of the silicon wafer (or an imaginary plane corresponding to the surface) and the detection optical axis of a photodetector is θ2, θ1−θ2 is −6° to −1° or 1° to 6°.

A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wx1 measured along a first axis. The bottom wafer pattern includes a first part with a width Wx2 measured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas:

Tx>Dx−Sx;

Tx<Dx−Sx+Wx2;

Tx>Sx;

Tx<Dx−Sx+Wx1; wherein, Tx represents a searching distance for finding an end-point of the first portion or an end-point of the first part; and Sx represents an actual shifting amount of the first portion.

In a processing apparatus, a vibration detecting unit includes a light source, an interference unit configured to apply light emitted from the light source to a measurement target member and generate an interference pattern image. A control unit includes a storage section configured to store a first interference pattern image captured at a predetermined timing by the imaging unit and a second interference pattern image captured at a timing different from the timing of the first interference pattern image by the imaging unit, a comparing section configured to compare the first interference pattern image and the second interference pattern image stored in the storage section with each other, and a vibration detecting section configured to detect vibration on the basis of the first interference pattern image and the second interference pattern image compared with each other by the comparing section.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

Measurement cavities described herein include a cylindrical chamber having a first open end and a second open end; a first cap covering the first open end of the cylindrical chamber and a second cap covering the second open end of the cylindrical chamber, wherein the first and second caps hermetically seal the cylindrical chamber and wherein the first cap is rigidly coupled to the second cap; and a wafer holder positioned within and coupled to the cylindrical chamber. The measurement cavity has a mass m, a stiffness k, and a damping constant c configured such that the transmissibility $.Math.\frac{x}{F}.Math.$
of an input force at 60 Hz in the measurement cavity is reduced by a factor of at least 10 and the measurement cavity has a natural frequency of greater than 300 Hz.

There is provided a method of calibrating multiple chamber pressure sensors of a substrate processing system. The substrate processing system includes: multiple chambers; multiple chamber pressure sensors; multiple gas suppliers configured to supply a gas to an internal space of the multiple chambers; multiple exhausters connected to the internal spaces of the multiple chambers via multiple exhaust flow paths; and multiple first gas flow paths. The method includes: acquiring a third volume, which is a sum of a first volume and a second volume; acquiring a first pressure change rate of the internal space of a selected chamber; calculating a second pressure change rate of the internal space of the selected chamber; and calibrating the selected chamber pressure sensor such that a difference between the first pressure change rate and the second pressure change rate is within a preset range.

Methods for calibrating metrology apparatuses and determining a parameter of interest are disclosed. In one arrangement, training data is provided that comprises detected representations of scattered radiation detected by each of plural metrology apparatuses. An encoder encodes each detected representation to provide an encoded representation, and a decoder generates a synthetic detected representation from the respective encoded representation. A classifier estimates from which metrology apparatus originates each encoded representation or each synthetic detected representation. The training data is used to simultaneously perform, in an adversarial relationship relative to each other, a first machine learning process involving the encoder or decoder and a second machine learning process involving the classifier.