Systems and methods are described for determining whether liquid remains on a wafer surface following a scanning operation. A system embodiment includes, but is not limited to, a first system configured for positioning adjacent a transfer line coupled with a scanning nozzle to dispense fluid onto a wafer surface and to recover the fluid from the wafer surface, the first system configured to detect a gas/liquid transition of the fluid and determine a volume of liquid sample dispensed; a second system configured for positioning adjacent a second line downstream from the scanning nozzle, the second system configured to detect a gas/liquid transition of fluid flowing through the second line and determine a volume of liquid sample recovered from the wafer surface; and a controller configured to generate an alert if the volume of liquid sample recovered is not within a threshold amount compared to the volume of liquid sample dispensed.

A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wx1 measured along a first axis. The bottom wafer pattern includes a first part with a width Wx2 measured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas:

Tx>Dx−Sx;

Tx<Dx−Sx+Wx2;

Tx>Sx;

Tx<Dx−Sx+Wx1; wherein, Tx represents a searching distance for finding an end-point of the first portion or an end-point of the first part; and Sx represents an actual shifting amount of the first portion.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.

A method is for detecting a condition associated with a final phase of a plasma dicing process. The method includes providing a non-metallic substrate having a plurality of dicing lanes defined thereon, plasma etching through the substrate along the dicing lanes, wherein during the plasma etching infrared emission emanating from at least a portion of the dicing lanes is monitored so that an increase in infrared emission from the dicing lanes is observed as the final phase of the plasma dicing operation is entered, and detecting the condition associated with the final phase of the plasma dicing from the monitored infrared emission.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller. The polishing head assembly holds a silicon wafer to position the silicon wafer in contact with the polishing pad. The polishing head assembly selectively varies a removal profile of the silicon wafer. The temperature sensor collects thermal data from a portion of the polishing pad. The controller is communicatively coupled to the polishing head assembly and the temperature sensor. The controller receives the thermal data from the temperature sensor and operates the polishing head assembly to selectively vary the removal profile of the silicon wafer based at least in part on the thermal data.

A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.