A light-emitting element array includes a semiconductor substrate that is rectangular, a plurality of light-emitting elements on the semiconductor substrate in a row along a first long side of the semiconductor substrate, a plurality of electrode pads on the semiconductor substrate in a plurality of rows along a second long side of the semiconductor substrate, and a plurality of wires on the semiconductor substrate to connect the plurality of light-emitting elements to the plurality of electrode pads. The plurality of electrode pads in the plurality of rows includes a first electrode pad in a row of the plurality of rows closest to the second long side and having a larger area than a second electrode pad in another row of the plurality of rows.

A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

A bonded structure is disclosed. The bonded structure can include an interconnect structure that has a first side and a second side opposite the first side. The bonded structure can also include a first die that is mounted to the first side of the interconnect structure. The first die can be directly bonded to the interconnect structure without an intervening adhesive. The bonded structure can also include a second die that is mounted to the first side of the interconnect structure. The bonded structure can further include an element that is mounted to the second side of the interconnect structure. The first die and the second die are electrically connected by way of at least the interconnect structure and the element.

A display device comprises a substrate comprising a first contact hole, a barrier insulating layer disposed on the substrate and comprising a second contact hole, a fan-out line disposed in a first metal layer on the barrier insulating layer and comprising a pad part inserted into the second contact hole, a display layer disposed on the fan-out line, and a flexible film disposed below the substrate and having a lead electrode which is inserted into the first contact hole and bonded to the pad part. The pad part comprises a first base, a first protrusion integral with the first base and protruding from the first base, and a second protrusion protruding from the first protrusion.

According to an example aspect of the present invention, there is provided a wafer-level package (1), comprising a top substrate (10) and a bottom substrate (30), wherein the top substrate (10) comprises a recess (12) on a side of the top substrate (10) which is towards the bottom substrate (30) and the bottom substrate (30) comprises a recess (32) on a side of the bottom substrate (30) which is towards the top substrate (10), wherein the recess (12) of the top substrate (10) and the recess (32) of the bottom substrate (30) are arranged to form a waveguide (5) within the wafer-level package (1) and a middle substrate (20) arranged to couple an integrated circuit (24) of the wafer-level package (1) to the waveguide (5), wherein the middle substrate (20) is in between the top substrate (10) and the bottom substrate (30) and the middle substrate (20) comprises a probe (21), wherein the probe (21) extends to the waveguide (5) and the probe (21) is arranged to couple a signal coming from the integrated circuit (24) to the waveguide (5), or to couple a signal coming from the waveguide (5) to the integrated circuit (24).

A bonded structure is disclosed. The bonded structure can include an interconnect structure that has a first side and a second side opposite the first side. The bonded structure can also include a first die that is mounted to the first side of the interconnect structure. The first die can be directly bonded to the interconnect structure without an intervening adhesive. The bonded structure can also include a second die that is mounted to the first side of the interconnect structure. The bonded structure can further include an element that is mounted to the second side of the interconnect structure. The first die and the second die are electrically connected by way of at least the interconnect structure and the element.

A semiconductor device with small variations in high frequency characteristics by suppressing variations in impedance while maintaining high heat radiation is provided. The semiconductor device including a semiconductor package having two terminals, a wiring board having an opening at which the semiconductor package is positioned and having two electrodes connected to the two terminals and a heat sink fixing the semiconductor package in which a center of the semiconductor package is decentered with respect to a center of the opening is used. Also, the semiconductor device in which a center of the two electrodes is decentered from a center of the opening is used.

The film for temporary fixing of the present invention is a film for temporary fixing which is used in a processing method of a semiconductor wafer, the method including a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing, a processing step of processing the semiconductor wafer that is temporarily fixed to the support, and a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing, contains (A) a high molecular weight component and (B) a silicone-modified resin, and has a modulus of elasticity of from 0.1 to 1000 MPa at 23 C. after being heated for 30 minutes at 110 C. and for 1 hour at 170 C.

A semiconductor device includes a conductive substrate, first semiconductor elements and a first conductive member. The substrate includes an obverse surface facing in thickness direction. The first semiconductor elements, bonded to the obverse surface, have a switching function. The conductive member includes a first wiring extending in x direction orthogonal to thickness direction; a second wiring spaced from the first wiring in y direction orthogonal to thickness and x directions, extending in x direction; a third wiring connected to the first wiring and the second wiring, extending in y direction, and connected to the first semiconductor elements; a fourth wiring spaced from the third wiring in x direction, connected to the first wiring and the second wiring, and extending in y direction; and a fifth wiring between the first wiring and the second wiring in y direction and connected to the third wiring and the fourth wiring.

A semiconductor device includes a semiconductor element, a first lead electrically connected to the semiconductor element, and a connecting member connected to the semiconductor element and the first lead. The connecting member includes a core containing a first material, and a surface layer. The surface layer contains a first metal and covers the core. The first material includes an alloy in which at least a third metal is added to a second metal and has a higher corrosion resistance than the second metal. The third metal has the highest proportion among the metals added and has an atomic number greater than the second metal.