A semiconductor package has a substrate, a chip and an encapsulation. The substrate has a dielectric layer, a copper wiring layer and a solder resist layer formed thereon. The copper wiring layer is formed on the dielectric layer and is covered by the solder resist layer. The solder resist layer has a chip area defined thereon and an annular opening formed thereon. The annular opening surrounds the chip area and exposes part of the copper wiring layer. The chip is mounted on the chip area and is encapsulated by the encapsulation. Therefore, the semiconductor package with the annular opening makes the solder resist layer discontinuous, and the concentration stress is decreased to avoid a crack formed on the solder resist layer or the copper wiring layer when doing thermal-cycle test.

Composite IC die package including IC die on both a first and second side of an interposer. The backside of first IC die are attached, for example through a direct bond, to a first side of the interposer. Redistribution layer (RDL) metal features are then fabricated, for example with semi-additive processes (SAP), to form interconnects to the frontside of the first die that terminate at first-level interconnect (FLI) interfaces. The frontside of second IC are attached, for example through a direct bond, to a second side of the interposer. Through vias in the interposer couple the second IC die to the first IC die and/or the FLI interfaces. Through vias of the interposer may be coupled to pillars on the first side of the interposer with the first IC die positioned between the pillars, facilitating power delivery to the second IC die.

In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.

An electronic device comprises a mold layer that includes multiple integrated circuit (IC) dice having contact pads, a glass core patch embedded in encapsulating material that surrounds the top, bottom, and sides of the glass core patch, and a first redistribution layer arranged between the first mold layer and the glass core patch. The first redistribution layer includes electrically conductive interconnect that electrically connects one or more contact pads of the IC dice to the glass core patch.

A substrate of a microelectronic assembly is provided, the substrate comprising conductive traces through an organic dielectric, and a coating comprising silicon and oxygen. The substrate is configured to couple with a component electrically and mechanically by at least one or more conductive via through the coating, the conductive via being electrically connected to the conductive traces, such that the coating is between the organic dielectric and the component when coupled. In some embodiments, the component includes another coating comprising silicon and oxygen, with conductive vias through the second coating. The conductive vias and the coating of the substrate are configured to bind with the conductive vias and the coating of the component respectively to form hybrid bonds.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

A semiconductor package has a substrate, a chip and an encapsulation. The substrate has a dielectric layer, a copper wiring layer and a solder resist layer formed thereon. The copper wiring layer is formed on the dielectric layer and is covered by the solder resist layer. The solder resist layer has a chip area defined thereon and an annular opening formed thereon. The annular opening surrounds the chip area and exposes part of the copper wiring layer. The chip is mounted on the chip area and is encapsulated by the encapsulation. Therefore, the semiconductor package with the annular opening makes the solder resist layer discontinuous, and the concentration stress is decreased to avoid a crack formed on the solder resist layer or the copper wiring layer when doing thermal-cycle test.

In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.