Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

A semiconductor structure includes a substrate, a through via penetrating the substrate, a trench capacitor, a first redistribution layer (RDL), a second RDL, and a contact feature. The trench capacitor extends from a back surface toward a front surface of the substrate, wherein the trench capacitor is separated from an active area at the front surface of the substrate. The first RDL is disposed over the front surface and electrically connecting to the through via, wherein the active area is disposed between the trench capacitor and the first RDL. The second RDL is disposed over the back surface and electrically connecting to the through via and the trench capacitor. The contact feature is disposed over the first RDL and electrically connecting to the trench capacitor through the first RDL, the through via and the second RDL. A method of manufacturing the semiconductor structure is also provided.

Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), and a plurality of die attached to the front and back side of the first RDL. The first and second RDLs are coupled together with a plurality of conductive pillars extending from the back side of the first RDL to a front side of the second RDL.