A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

A method of making a package is disclosed. The method may include forming bond pads on a first surface of a substrate, forming leads in the substrate by etching recesses in a second surface of the substrate, the second surface being opposite the first surface, and plating at least a portion of a top surface of the leads with a layer of finish plating. The method may also include thermosonically bonding the leads to a die by thermosonically bonding the finish plating to the die and encapsulating the die and the leads in an encapsulant.

The semiconductor device according to one embodiment includes a semiconductor substrate having a first surface and a second surface on an opposite side of the first surface, a gate insulating film formed on the first surface, a gate formed on the first surface via the gate insulating film, a source region formed in the first surface side of the semiconductor substrate, a body region formed so as to be in contact with the source region and including a channel region, a drain region formed in the second surface side of the semiconductor substrate, and a drift region formed so as to be in contact with the second surface side of the body region and the first surface side of the drain region. The semiconductor substrate has at least one concave portion formed in the second surface and being recessed toward the first surface.

An electronic power module includes at least a semiconductor chip having at least one electronic power component and two metal layers between which the semiconductor chip is directly secured. At least a first of the two metal layers forms a redistribution layer having several distinct metal portions, each electrically connected to at least one electrical contact pad of the semiconductor chip, and/or at least one second of the two metal layers includes at least one first structured face arranged against the semiconductor chip and having at least one pad formed in a part of its thickness.

A packaging method and a package structure are provided. The packaging method includes the following steps. Firstly, a plurality of chips are disposed on a carrying surface of a carrying board for chip redistribution. Each of the chips includes a first side connected to the carrying surface and a second side opposite to the first side, and the second side is provided with at least one chip connecting member. Next, a base structure is provided. The base structure has a bonding surface provided with a plurality of predetermined areas for bonding the chips respectively, and each of the predetermined regions has at least one electrically connecting structure formed therein. Lastly, an encapsulating material is applied to integrate the base structure, the chips, and the carrying board into a unitary structure under specific hot pressing conditions.

A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

A semiconductor flip-chip package includes a substrate having a first main face, a second main face opposite to the first main face, and one or more conductive structures disposed on the first main face, one or more pillars disposed on at least one of the conductive structures, a semiconductor die having one or more contact pads on a main face thereof, the semiconductor die being connected to the substrate so that at least one of the contact pads is connected with one of the pillars, and an encapsulant disposed on the substrate and the semiconductor die.

In a method for connecting components during production of power electronics modules or assemblies, surfaces of the components have a metallic surface layer upon supply, or are furnished therewith, wherein the layer has a surface that is smooth enough to allow direct bonding or is smoothed to obtain a surface that is smooth enough to allow direct bonding. The surface layers of the surfaces that are to be connected are then pressed against each other with a pressure of at least 5 MPa at elevated temperature, so that they are joined to each other, forming a single layer. The method enables simple, rapid connection of even relatively large contact surfaces, which satisfies the high requirements of power electronics modules.

A semiconductor flip-chip package includes a substrate having a first main face, a second main face opposite to the first main face, and one or more conductive structures disposed on the first main face, one or more pillars disposed on at least one of the conductive structures, a semiconductor die having one or more contact pads on a main face thereof, the semiconductor die being connected to the substrate so that at least one of the contact pads is connected with one of the pillars, and an encapsulant disposed on the substrate and the semiconductor die.

A method of making a package is disclosed. The method may include forming bond pads on a first surface of a substrate, forming leads in the substrate by etching recesses in a second surface of the substrate, the second surface being opposite the first surface, and plating at least a portion of a top surface of the leads with a layer of finish plating. The method may also include thermosonically bonding the leads to a die by thermosonically bonding the finish plating to the die and encapsulating the die and the leads in an encapsulant.