Provided is a method for manufacturing a conductive pillar capable of bonding a substrate and a bonding member with high bonding strength via a bonding layer without employing an electroplating method, and a method for manufacturing a bonded structure by employing this method. A method for manufacturing a conductive pillar 1 includes, in sequence, the steps of forming a resist layer 16 on a substrate 11 provided with an electrode pad 13, the resist layer 16 including an opening portion 16a on the electrode pad 13, forming a thin Cu film 17 by sputtering or evaporating Cu on a surface of the substrate 11 provided with the resist layer 16 including the opening portion 16a, filling the opening portion 16a with a fine particle copper paste 12c, and sintering the fine particle copper paste 12c by heating the substrate 11 filled with the fine particle copper paste 12c.

Disclosed is a flip-chip device. The flip-chip device includes a die having a plurality of under bump metallizations (UBMs); and a package substrate having a plurality of bond pads. The plurality of UBMs include a first set of UBMs having a first size and a first minimum pitch and a second set of UBMs having a second size and a second minimum pitch. The first set of UBMs and the second set of UBMs are each electrically coupled to the package substrate by a bond-on-pad connection.

Disclosed is a flip-chip device. The flip-chip device includes a die having a plurality of under bump metallizations (UBMs); and a package substrate having a plurality of bond pads. The plurality of UBMs include a first set of UBMs having a first size and a first minimum pitch and a second set of UBMs having a second size and a second minimum pitch. The first set of UBMs and the second set of UBMs are each electrically coupled to the package substrate by a bond-on-pad connection.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages are disclosed. In one embodiment, a semiconductor device includes an insulating material layer having openings on a surface of a substrate. One or more insertion bumps are disposed over the insulating material layer. The semiconductor device includes signal bumps having portions that are not disposed over the insulating material layer.

A semiconductor structure includes a semiconductor substrate; a first pad and a second pad on a first top surface of the semiconductor substrate; a circuit board including a second top surface, a recess indented from the second top surface into the circuit board, a polymeric pad disposed on the second top surface and corresponding to the first pad, and an active pad disposed within the recess and corresponding to the second pad; a first bump disposed between and contacting the polymeric pad and the first pad; and a second bump disposed between and contacting the active pad and the second pad, wherein a height of the first bump is substantially shorter than a height of the second bump.

A manufacturing method of a metal bump structure is provided. A driving base is provided. At least one pad and an insulating layer are formed on the driving base. The pad is formed on an arrangement surface of the driving base and has an upper surface. The insulating layer covers the arrangement surface of the driving base and the pad, and exposes a part of the upper surface of the pad. A patterned metal layer is formed on the upper surface of the pad exposed by the insulating layer, and extends to cover a part of the insulating layer. An electro-less plating process is performed to form at least one metal bump on the patterned metal layer. A first extension direction of the metal bump is perpendicular to a second extension direction of the driving base.

A semiconductor package having a die with a sidewall protected by molding compound, and methods of forming the same are disclosed. The package includes a die with a first surface opposite a second surface and sidewalls extending between the first and second surfaces. A redistribution layer is formed on the first surface of each die. An area of the first surface of the die is greater than an area of the redistribution layer, such that a portion of the first surface of the die is exposed. When molding compound is formed over the die and the redistribution layer to form a semiconductor package, the molding compound is on the first surface of the die between an outer edge of the redistribution layer and an outer edge of the first surface. The molding compound is also on the sidewalls of the die, which provides protection against chipping or cracking during transport.

Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an interface layer over the first dies, a backside metallization (BSM) layer directly on the interface layer, where the BSM layer includes first, second, and third conductive layer, and a heat spreader over the BSM layer. The first conductive layer includes a titanium material. The second conductive layer includes a nickel-vanadium material. The third conductive layer includes a gold material, a silver material, or a copper material. The copper material may include copper bumps. The semiconductor package may include a plurality of second dies on a package substrate. The substrate may be on the package substrate. The second dies may have top surfaces substantially coplanar to top surface of the first dies. The BSM and interface layers may be respectively over the first and second dies.

A method includes forming a package component comprising forming a dielectric layer, patterning the dielectric layer to form an opening, and forming a redistribution line including a via in the opening, a conductive pad, and a bent trace. The via is vertically offset from the conductive pad. The conductive pad and the bent trace are over the dielectric layer. The bent trace connects the conductive pad to the via, and the bent trace includes a plurality of sections with lengthwise directions un-parallel to each other. A conductive bump is formed on the conductive pad.

Semiconductor devices including continuous-core connectors and associated systems and methods are disclosed herein. The continuous-core connectors each include a peripheral wall that surrounds an inner-core configured to provide an electrical path using uniform material.