A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A display device includes a base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A display device includes a base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A semiconductor device having an electrode type of the ball grid array (BGA) and a process of forming the electrode are disclosed. The electrode insulating film, a seed layer on the insulating film, a mound metal on the insulating film and an interconnection on the seed layer. The mound metal surrounds the seed layer without forming any gap therebetween. The interconnection, which is formed by electroless plating, is apart from the insulating film with the mound metal as an extension barrier for the plating.

A chip package may include: a first die; at least one second die disposed over the first die; and a lid disposed over lateral portions of the first die and at least partially surrounding the at least one second die, the lid having inclined sidewalls spaced apart from and facing the at least one second die.