A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.

Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.

Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.

A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.

A bump electrode is formed on an electrode pad using a Cu core ball in which a core material is covered with solder plating, and a board which has bump electrodes such as semiconductor chip or printed circuit board mounts such a bump electrode. Flux is coated on a substrate and the bump electrodes are then mounted on the electrode pad. In a step of heating the electrode pad and the Cu core ball to melt the solder plating, a heating rate of the substrate is set to have not less than 0.01 C./sec and less than 0.3.

A bump electrode is formed on an electrode pad using a Cu core ball in which a core material is covered with solder plating, and a board which has bump electrodes such as semiconductor chip or printed circuit board mounts such a bump electrode. Flux is coated on a substrate and the bump electrodes are then mounted on the electrode pad. In a step of heating the electrode pad and the Cu core ball to melt the solder plating, a heating rate of the substrate is set to have not less than 0.01 C./sec and less than 0.3.