A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

An under bump metallurgy (UBM) and redistribution layer (RDL) routing structure includes an RDL formed over a die. The RDL comprises a first conductive portion and a second conductive portion. The first conductive portion and the second conductive portion are at a same level in the RDL. The first conductive portion of the RDL is separated from the second conductive portion of the RDL by insulating material of the RDL. A UBM layer is formed over the RDL. The UBM layer includes a conductive UBM trace and a conductive UBM pad. The UBM trace electrically couples the first conductive portion of the RDL to the second conductive portion of the RDL. The UBM pad is electrically coupled to the second conductive portion of the RDL. A conductive connector is formed over and electrically coupled to the UBM pad.

Disclosed herein are a semiconductor package and a method of manufacturing the same. The semiconductor package according to embodiments of the present disclosure includes a wiring including a plurality of layers including an insulating layer and a wiring layer, a semiconductor chip mounted on the wiring and electrically connected to the wiring layer through a bonding pad, a cover member configured to cover side surfaces of the semiconductor chip and the wiring and be in contact with at least one wiring layer, and an encapsulant configured to seal the cover member. Accordingly, the cover member covers the semiconductor chip and is in contact with the wiring formed under the semiconductor chip, thereby reducing electromagnetic interference, minimizing noise between operations of the semiconductor package, and improving a signal speed

Disclosed herein are a semiconductor package and a method of manufacturing the same. The semiconductor package according to embodiments of the present disclosure includes a wiring including a plurality of layers including an insulating layer and a wiring layer, a semiconductor chip mounted on the wiring and electrically connected to the wiring layer through a bonding pad, a cover member configured to cover side surfaces of the semiconductor chip and the wiring and be in contact with at least one wiring layer, and an encapsulant configured to seal the cover member. Accordingly, the cover member covers the semiconductor chip and is in contact with the wiring formed under the semiconductor chip, thereby reducing electromagnetic interference, minimizing noise between operations of the semiconductor package, and improving a signal speed

A semiconductor device includes a carrier, an under bump metallurgy (UBM) pad on the carrier, and a post on a surface of the UBM pad. In some embodiments, a height of the post to a longest length of the UBM pad is between about 0.25 and about 0.7. A method of manufacturing a semiconductor device includes providing a carrier, disposing a UBM pad on the carrier and forming a post on the UBM pad.

A semiconductor device includes a carrier, an under bump metallurgy (UBM) pad on the carrier, and a post on a surface of the UBM pad. In some embodiments, a height of the post to a longest length of the UBM pad is between about 0.25 and about 0.7. A method of manufacturing a semiconductor device includes providing a carrier, disposing a UBM pad on the carrier and forming a post on the UBM pad.

Mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through an opening. The semiconductor device further includes a post-passivation interconnect layer over the passivation layer and coupled to the second portion of the contact pad. In addition, the semiconductor device includes a bump over the post-passivation interconnect layer and outside of the opening. The semiconductor device also includes a diffusion barrier layer physically insulating the bump from the post-passivation interconnect layer while electrically connecting the bump to the post-passivation interconnect layer.