A substrate or semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes a barrier on a solder cup. The semiconductor device assembly includes a substrate disposed over another substrate. At least one solder cup extends from one substrate towards an under bump metal (UBM) on the other substrate. The barrier on the exterior of the solder cup may be a standoff to control a bond line between the substrates. The barrier may reduce solder bridging during the formation of a semiconductor device assembly. The barrier may help to align the solder cup with a UBM when forming a semiconductor device assembly and may reduce misalignment due to lateral movement of substrates and/or semiconductor devices.

A substrate or semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes a barrier on a solder cup. The semiconductor device assembly includes a substrate disposed over another substrate. At least one solder cup extends from one substrate towards an under bump metal (UBM) on the other substrate. The barrier on the exterior of the solder cup may be a standoff to control a bond line between the substrates. The barrier may reduce solder bridging during the formation of a semiconductor device assembly. The barrier may help to align the solder cup with a UBM when forming a semiconductor device assembly and may reduce misalignment due to lateral movement of substrates and/or semiconductor devices.

An advanced through silicon via structure for is described. The device includes a substrate including integrated circuit devices. A high aspect ratio through substrate via is disposed in the substrate. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A metallic barrier layer is disposed on the sidewalls of the through substrate via. A surface portion of the metallic barrier layer has been converted to a nitride surface layer by a nitridation process. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer fills the through substrate via and has a recess in an upper portion. A second barrier layer is disposed over the recess. A second metal layer is disposed over the second barrier layer and creates a contact.

An advanced through silicon via structure for is described. The device includes a substrate including integrated circuit devices. A high aspect ratio through substrate via is disposed in the substrate. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A metallic barrier layer is disposed on the sidewalls of the through substrate via. A surface portion of the metallic barrier layer has been converted to a nitride surface layer by a nitridation process. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer fills the through substrate via and has a recess in an upper portion. A second barrier layer is disposed over the recess. A second metal layer is disposed over the second barrier layer and creates a contact.

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

A wiring board includes first insulating layers; first wiring layers; first via wirings; second insulating layers; second wiring layers; second via wirings; and a solder resist layer, wherein the first insulating layers are composed of non-photosensitive resin, wherein the second insulating layers, and the solder resist layer are composed of photosensitive resin, respectively, wherein the first surface of the uppermost first insulating layer and the first end surface of the first via wiring embedded in the uppermost first insulating layer are polished surfaces, wherein the first end surface of the first via wiring embedded in the uppermost first insulating layer is flush with the first surface of the uppermost first insulating layer, and wherein the wiring density of the second wiring layers is higher than the wiring density of the first wiring layers.

A wiring board includes first insulating layers; first wiring layers; first via wirings; second insulating layers; second wiring layers; second via wirings; and a solder resist layer, wherein the first insulating layers are composed of non-photosensitive resin, wherein the second insulating layers, and the solder resist layer are composed of photosensitive resin, respectively, wherein the first surface of the uppermost first insulating layer and the first end surface of the first via wiring embedded in the uppermost first insulating layer are polished surfaces, wherein the first end surface of the first via wiring embedded in the uppermost first insulating layer is flush with the first surface of the uppermost first insulating layer, and wherein the wiring density of the second wiring layers is higher than the wiring density of the first wiring layers.

Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a S.sub.nO film is formed outside the solder layer, and a S.sub.nO.sub.2 film is formed outside the S.sub.nO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

An electronic device for interconnection with an integrated circuit device is provided. The electronic device includes an interconnection surface configured to oppose the integrated circuit device with an interconnect structure disposed therebetween. The electronic device also includes at least one electronic device contact pad disposed on the interconnection surface for bonding to the interconnect structure. The at least one electronic device contact pad has at least one 3-dimensional projection configured to extend from the electronic device contact pad toward the integrated circuit device. The at least one 3-dimensional projection is configured to aid in bonding the electronic device contact pad to the interconnect structure to electrically couple the electronic device to the integrated circuit device.