A method for forming a semiconductor structure includes following operations. A first substrate including a first side, a second side opposite to the first side, and a metallic pad disposed over the first side is received. A dielectric structure including a first trench directly above the metallic pad is formed. A second trench is formed in the dielectric structure and a portion of the first substrate. A sacrificial layer is formed to fill the first trench and the second trench. A third trench is formed directly above the metallic pad. A barrier ring and a bonding structure are formed in the third trench. A bonding layer is disposed to bond the first substrate to a second substrate. A portion of the second side of the first substrate is removed to expose the sacrificial layer. The sacrificial layer is removed by an etchant.

A method for forming a semiconductor structure includes following operations. A first substrate including a first side, a second side opposite to the first side, and a metallic pad disposed over the first side is received. A dielectric structure including a first trench directly above the metallic pad is formed. A second trench is formed in the dielectric structure and a portion of the first substrate. A sacrificial layer is formed to fill the first trench and the second trench. A third trench is formed directly above the metallic pad. A barrier ring and a bonding structure are formed in the third trench. A bonding layer is disposed to bond the first substrate to a second substrate. A portion of the second side of the first substrate is removed to expose the sacrificial layer. The sacrificial layer is removed by an etchant.

Embodiments include semiconductor packages and cooling semiconductor packaging systems. A semiconductor package includes a second die on a package substrate, first dies on the second die, conductive bumps between the first dies and the second die, a cold plate and a manifold over the first dies, second die, and package substrate, and first openings in the manifold. The first openings are fluidly coupled through the conductive bumps. The semiconductor package may include a first fluid path through the first openings of the manifold, where a first fluid flows through the first fluid path. The semiconductor package may further include a second fluid path through second openings of the cold plate, where a second fluid flows through the second fluid path, and where the first and second fluids of the first and second fluid paths cool heat providing surfaces of the first dies, the second die, or the package substrate.

Embodiments include semiconductor packages and cooling semiconductor packaging systems. A semiconductor package includes a second die on a package substrate, first dies on the second die, conductive bumps between the first dies and the second die, a cold plate and a manifold over the first dies, second die, and package substrate, and first openings in the manifold. The first openings are fluidly coupled through the conductive bumps. The semiconductor package may include a first fluid path through the first openings of the manifold, where a first fluid flows through the first fluid path. The semiconductor package may further include a second fluid path through second openings of the cold plate, where a second fluid flows through the second fluid path, and where the first and second fluids of the first and second fluid paths cool heat providing surfaces of the first dies, the second die, or the package substrate.

Disclosed herein is an integrated circuit (IC) comprising a semiconductor wafer, a dielectric layer, and an isolation element. The semiconductor wafer has a first wafer portion and a second wafer portion each extending from a frontside surface to a backside surface. The dielectric layer interfaces with the first wafer portion and with the second wafer portion each on the frontside surface. The isolation element has an isolation dielectric material, and the isolation element extends between a first side surface of the first wafer portion and a second side surface of the second wafer portion and from an extension plane of the frontside surface to an extension plane of the backside surface. Also disclosed herein is a system comprising the IC and a package substrate coupled to the IC.

An electronic-part-reinforcing thermosetting resin composition has: a viscosity of 5 Pa.Math.s or less at 140° C.; a temperature of 150° C. to 170° C. as a temperature corresponding to a maximum peak of an exothermic curve representing a curing reaction; and a difference of 20° C. or less between the temperature corresponding to the maximum peak and a temperature corresponding to one half of the height of the maximum peak in a temperature rising range of the exothermic curve.

A semiconductor package includes a leadframe forming a plurality of leads with a die attach site, a semiconductor die including a set of die contacts mounted to the die attach site in a flip chip configuration with each die contact of the set of die contacts electrically connected to leadframe via one of a set of solder joints, a set of solder joint capsules covering each of the set of solder joints against the leadframe, a clip mounted to the leadframe over the semiconductor die with a clip solder joint. The solder joint capsules restrict flow of the solder joints of the semiconductor die contacts in the flip chip configuration such that the solder remains in place if remelted during later clip solder reflow.

A semiconductor package includes a leadframe forming a plurality of leads with a die attach site, a semiconductor die including a set of die contacts mounted to the die attach site in a flip chip configuration with each die contact of the set of die contacts electrically connected to leadframe via one of a set of solder joints, a set of solder joint capsules covering each of the set of solder joints against the leadframe, a clip mounted to the leadframe over the semiconductor die with a clip solder joint. The solder joint capsules restrict flow of the solder joints of the semiconductor die contacts in the flip chip configuration such that the solder remains in place if remelted during later clip solder reflow.

A mechanism is described for facilitating stretchable and self-healing solders in microelectronics manufacturing environments. An apparatus of embodiments, as described herein, includes one or more solders associated with a microelectronics component, where the one or more solders contain a liquid metal and are wrapped in an encapsulation material. The apparatus further includes a substrate coupled to the one or more solders.

A mechanism is described for facilitating stretchable and self-healing solders in microelectronics manufacturing environments. An apparatus of embodiments, as described herein, includes one or more solders associated with a microelectronics component, where the one or more solders contain a liquid metal and are wrapped in an encapsulation material. The apparatus further includes a substrate coupled to the one or more solders.