H01L2224/1389

HYBRID MANUFACTURING FOR INTEGRATING PHOTONIC AND ELECTRONIC COMPONENTS

Microelectronic assemblies fabricated using hybrid manufacturing for integrating photonic and electronic components, as well as related devices and methods, are disclosed herein. As used herein, “hybrid manufacturing” refers to fabricating a microelectronic assembly by bonding at least two IC structures fabricated using different manufacturers, materials, or manufacturing techniques. Before bonding, at least one IC structure may include photonic components such as optical waveguides, electro-optic modulators, and monolithically integrated lenses, and at least one may include electronic components such as electrically conductive interconnects, transistors, and resistors. One or more additional electronic and/or photonic components may be provided in one or more of these IC structures after bonding. For example, an interconnect implemented as an electrically conductive via or a waveguide implemented as a dielectric via may be provided after bonding to extend through one or more of the bonded IC structures.

HYBRID MANUFACTURING FOR INTEGRATING PHOTONIC AND ELECTRONIC COMPONENTS

Microelectronic assemblies fabricated using hybrid manufacturing for integrating photonic and electronic components, as well as related devices and methods, are disclosed herein. As used herein, “hybrid manufacturing” refers to fabricating a microelectronic assembly by bonding at least two IC structures fabricated using different manufacturers, materials, or manufacturing techniques. Before bonding, at least one IC structure may include photonic components such as optical waveguides, electro-optic modulators, and monolithically integrated lenses, and at least one may include electronic components such as electrically conductive interconnects, transistors, and resistors. One or more additional electronic and/or photonic components may be provided in one or more of these IC structures after bonding. For example, an interconnect implemented as an electrically conductive via or a waveguide implemented as a dielectric via may be provided after bonding to extend through one or more of the bonded IC structures.

Driving chip bump having irregular surface profile, display panel connected thereto and display device including the same

A display device includes: a display panel driven to display an image, the display panel including a substrate including a display area at which the image is displayed; a terminal pad on the substrate and through which a driving signal is applied to the display area; a driving chip through which the driving signal is applied to the terminal pad; and a non-conductive film which fixes the driving chip to the substrate. The driving chip includes: a non-conductive elastic support body projected from a surface of the driving chip; a bump wiring on the non-conductive elastic support body, the bump wiring directly contacting the terminal pad to apply the driving signal to the terminal pad; and a dispersed particle on the non-conductive elastic support body.

DRIVING CHIP BUMP HAVING IRREGULAR SURFACE PROFILE, DISPLAY PANEL CONNECTED THERETO AND DISPLAY DEVICE INCLUDING THE SAME
20180108643 · 2018-04-19 ·

A display device includes: a display panel driven to display an image, the display panel including a substrate including a display area at which the image is displayed; a terminal pad on the substrate and through which a driving signal is applied to the display area; a driving chip through which the driving signal is applied to the terminal pad; and a non-conductive film which fixes the driving chip to the substrate. The driving chip includes: a non-conductive elastic support body projected from a surface of the driving chip; a bump wiring on the non-conductive elastic support body, the bump wiring directly contacting the terminal pad to apply the driving signal to the terminal pad; and a dispersed particle on the non-conductive elastic support body.

Hybrid manufacturing for integrating photonic and electronic components

Microelectronic assemblies fabricated using hybrid manufacturing for integrating photonic and electronic components, as well as related devices and methods, are disclosed herein. As used herein, hybrid manufacturing refers to fabricating a microelectronic assembly by bonding at least two IC structures fabricated using different manufacturers, materials, or manufacturing techniques. Before bonding, at least one IC structure may include photonic components such as optical waveguides, electro-optic modulators, and monolithically integrated lenses, and at least one may include electronic components such as electrically conductive interconnects, transistors, and resistors. One or more additional electronic and/or photonic components may be provided in one or more of these IC structures after bonding. For example, an interconnect implemented as an electrically conductive via or a waveguide implemented as a dielectric via may be provided after bonding to extend through one or more of the bonded IC structures.

Hybrid manufacturing for integrating photonic and electronic components

Microelectronic assemblies fabricated using hybrid manufacturing for integrating photonic and electronic components, as well as related devices and methods, are disclosed herein. As used herein, hybrid manufacturing refers to fabricating a microelectronic assembly by bonding at least two IC structures fabricated using different manufacturers, materials, or manufacturing techniques. Before bonding, at least one IC structure may include photonic components such as optical waveguides, electro-optic modulators, and monolithically integrated lenses, and at least one may include electronic components such as electrically conductive interconnects, transistors, and resistors. One or more additional electronic and/or photonic components may be provided in one or more of these IC structures after bonding. For example, an interconnect implemented as an electrically conductive via or a waveguide implemented as a dielectric via may be provided after bonding to extend through one or more of the bonded IC structures.

THERMAL PERFORMANCE OF STACKED DIES
20250218987 · 2025-07-03 ·

A semiconductor package according to the present disclosure includes an interposer and a component mounted on the interposer. The component includes a first die and a second die disposed over the first die having a surface away from the first die. The second die includes a metal pad. A top surface of the metal pad is coplanar with the surface. The metal pad is electrically floating.

THERMAL PERFORMANCE OF STACKED DIES
20250349769 · 2025-11-13 ·

A semiconductor package according to the present disclosure includes an interposer and a component mounted on the interposer. The component includes a first die and a second die disposed over the first die having a surface away from the first die. The second die includes a metal pad. A top surface of the metal pad is coplanar with the surface. The metal pad is electrically floating.