An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may assist temperature control of the IC die when in operation. In one example, the temperature control element may have a plurality of thermal dissipating features disposed on a first surface of the IC die to efficiently control and dissipate the thermal energy from the IC die when in operation. A second surface opposite to the first surface of the IC die may include a plurality of devices, such as semiconductors transistors, devices, electrical components, circuits, or the like, that may generate thermal energy when in operation. The temperature control element may provide an IC die with high efficiency of heat dissipation that is suitable for 3D IC package structures and requirements.

Embodiments include a wafer-on-wafer bonding where each wafer includes a seal ring structure around die areas defined in the wafer. Embodiments provide a further seal ring spanning the interface between the wafers. Embodiments may extend the existing seal rings of the wafers, provide an extended seal ring structure separate from the existing seal rings of the wafers, or combinations thereof.

Embodiments include a wafer-on-wafer bonding where each wafer includes a seal ring structure around die areas defined in the wafer. Embodiments provide a further seal ring spanning the interface between the wafers. Embodiments may extend the existing seal rings of the wafers, provide an extended seal ring structure separate from the existing seal rings of the wafers, or combinations thereof.

A method for producing an electronic module includes providing a first substrate including at least one first electrical contacting surface, an electronic component including at least one second electrical contacting surface, and a first material layer made of a thermoplastic material including at least one recess extending through the material layer. The first substrate, the electronic component and the first material layer are arranged with the first material layer disposed between the first substrate and the electronic component, and the at least one first electrical contacting surface, the at least one second electrical contacting surface and the at least one recess aligned relative to one another. The first substrate, the electronic component and the material layer are thermocompression bonded. A joint formed between the at least one first electrical contacting surface and the at least one second electrical contacting surface is surrounded or enclosed by the first material layer.

In one example, a semiconductor device, comprises a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.

A semiconductor device comprises a first chip layer, having a first chip layer front-side and a first chip layer back-side, a qubit chip layer, having a qubit chip layer front-side and a qubit chip layer back-side, the qubit chip layer front-side operatively coupled to the first chip layer front-side with a set of bump-bonds, a set of through-silicon vias (TSVs) connected to at least one of: the first chip layer back-side or the qubit chip layer back-side and a cap wafer metal bonded to at least one of: the qubit chip layer back-side or the first chip layer back-side.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.

A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The lid comprises an annular lid base and a cover plate removably installed on the annular lid base. The semiconductor package can be uncovered by removing the cover plate and a forced cooling module can be installed in place of the cover plate.

The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a first device, first electrical connectors, a second device and second electrical connectors. The first device is attached to a package substrate. An active side of the first device die faces toward the package substrate. The first electrical connectors connect the active side of the first device die to the package substrate. The second device die is stacked over the first device die. An active side of the second device die faces toward the package substrate. A portion of the active side of the second device die is outside an area that overlaps the first device die. The second electrical connectors connect the portion of the active side of the second device die to the package substrate.