H01L2224/45691

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

TEMPERATURE-STABLE COMPOSITE OF A STRANDED WIRE HAVING A CONTACT PAD
20230318207 · 2023-10-05 ·

The invention relates to an electrical element having at least one functional region and a contact surface, wherein a connecting element is arranged on the contact surface, wherein the connecting element comprises a stranded wire coated with sintered material, wherein the stranded wire is connected, in particular sintered, to the contact surface by a sintered material. Furthermore, the invention relates to a method for producing the electrical element according to the invention.

Temperature-stable composite of a stranded wire having a contact pad
12308588 · 2025-05-20 · ·

The invention relates to an electrical element having at least one functional region and a contact surface, wherein a connecting element is arranged on the contact surface, wherein the connecting element comprises a stranded wire coated with sintered material, wherein the stranded wire is connected, in particular sintered, to the contact surface by a sintered material. Furthermore, the invention relates to a method for producing the electrical element according to the invention.

SEMICONDUCTOR DEVICE
20250259962 · 2025-08-14 · ·

A semiconductor device includes: a semiconductor chip having a first main electrode on a top surface side and a second main electrode on a bottom surface side; a bonding wire connected to the first main electrode; an insulating layer covering an outer circumference of the bonding wire; and a sealing material sealing the semiconductor chip, the bonding wire, and the insulating layer, wherein a ratio of a Young's modulus of the insulating layer to a Young's modulus of the sealing material is 10 or greater.