A light module has a carrier with a circuit die. On the top side of the carrier, a light-emitting diode die, and a charge store component are electrically connected to the conduction path terminal fields of a transistor by means of die-to-die bondings. The electrical connection between the two dies and the conduction path of the transistor is as short as possible. A terminal field is situated in each case on the top side of the two dies, which terminal fields are connected to one another using a first bonding wire. The charge store component is charged by means of a charging circuit which is electrically connected to the charge store component via a second bonding wire. The second bonding wire is longer than the first bonding wire. The light module may be part of a LIDAR apparatus.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A module arrangement for power semiconductor devices, includes two or more heat spreading layers with a first surface and a second surface being arranged opposite to the first surface. At least two or more power semiconductor devices are arranged on the first surface of the heat spreading layer and electrically connected thereto. An electrical isolation stack comprising an electrically insulating layer and electrically conductive layers is arranged in contact with the second surface of each heat spreading layer. The at least two or more power semiconductor devices, the heat spreading layers and a substantial part of each of the electrical isolation stacks are sealed from their surrounding environment by a molded enclosure. Accordingly, similar or better thermal characteristic of the module can be achieved instead of utilizing high cost electrically insulating layers, and double side cooling configurations can be easily implemented, without the use of a thick baseplate.

A packaged multichip device includes a first IC die with an isolation capacitor utilizing a top metal layer as its top plate and a lower metal layer as its bottom plate. A second IC die has a second isolation capacitor utilizing its top metal layer as its top plate and a lower metal layer as its bottom plate. A first bondwire end is coupled to one top plate and a second bondwire end is coupled to the other top plate. The second bondwire end includes a stitch bond including a wire approach angle not normal to the top plate it is bonded to and is placed so that the stitch bond's center is positioned at least 5% further from an edge of this top plate on a bondwire crossover side compared to a distance of the stitch bond's center from the side opposite the bondwire crossover side.

A display device includes: a first substrate; a plurality of light-emitting elements on the first substrate; a second substrate opposite to the first substrate, and including one face facing the first substrate, and an opposite face to the one face; a plurality of grooves at the opposite face of the second substrate; a plurality of wavelength conversion layers, each of the wavelength conversion layers being located in a corresponding groove of the plurality of grooves to convert a wavelength of light emitted from a corresponding light-emitting element of the plurality of light-emitting elements; and a plurality of color filters on the wavelength conversion layers, respectively.

A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

A semiconductor device according to one embodiment includes: a semiconductor chip having a transistor and a drain pad provided on a board; a capacitor having an upper electrode and a lower electrode interposing a dielectric; a pad; and an empty pad provided on the board of the semiconductor chip. The semiconductor device further includes: a first wire connecting the pad and the drain pad of the semiconductor chip to each other; a second wire connecting the empty pad and the upper electrode of the capacitor to each other; and a third wire connecting the pad and the empty pad to each other.

The third side surface includes inclined surfaces inclined in a direction in which a center in an up-down direction of the third side surface is convex. The mold resin further includes a residual section provided in the center of the third side surface and a dowel section provided between the inclined surface and the residual section. The dowel section projects further in a lateral direction than the inclined surface. The residual section further projects in the lateral direction than the dowel section and has a fracture surface perpendicular to the up-down direction.

A semiconductor package according to the exemplary embodiments of the disclosure includes a base substrate including a base bonding pad, a first semiconductor chip disposed on the base substrate, a first adhesive layer provided under the first semiconductor chip, a first bonding pad provided in a bonding region on an upper surface of the first semiconductor chip, a first bonding wire interconnecting the base bonding pad and the first bonding pad, and a crack preventer provided in a first region at the upper surface of the first semiconductor chip. The crack preventer includes dummy pads provided at opposite sides of the first region and a dummy wire interconnecting the dummy pads.

Described is a packaged component having a first surface and an opposite second surface. The packaged component may comprise a first element a second element, and a third element. The first element may have a first surface and an opposite second surface. The second element may have a first surface and an opposite second surface. The third element may electrically connect a portion of the first element to a portion of the second element. The second surface of the first element may be adjacent to the second surface of the packaged component, and the second surface of the second element may be adjacent to the second surface of the packaged component.