H01L2224/48101

PACKAGE COMPRISING WIRE BONDS COUPLED TO INTEGRATED DEVICES
20220320026 · 2022-10-06 ·

A package that includes a substrate comprising a cavity, a first integrated device coupled to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects, a second integrated device coupled to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects, and a plurality of wire bonds coupled to the first integrated device and the second integrated device, wherein the plurality of wire bonds is located over the cavity of the substrate.

Semiconductor device and manufacturing method for semiconductor device
11676871 · 2023-06-13 · ·

A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.

Electronic Package and Electronic Device Comprising the Same
20230178464 · 2023-06-08 ·

Example embodiments relate to electronic packages and electronic devices that include the same. One embodiment includes an electronic package. The electronic package includes a package body. The electronic package also includes a heat-conducting substrate arranged inside the package body and having a bottom surface that is exposed to an outside of the package body. Additionally, the electronic package includes an electronic circuit arranged inside the package body and including a semiconductor die that has a bottom surface with which it is mounted to the heat-conducting substrate and an opposing upper surface. Further, the electronic package includes one or more leads partially extending from outside the package body to inside the package body and over the minimum bounding box, each lead having a first end that is arranged inside the package body. In addition, the electronic package includes one or more bondwires for connecting the first end(s) to the electronic circuit.

Flexible circuit leads in packaging for radio frequency devices

A packaged RF device is provided that utilizes flexible circuit leads. The RF device includes at least one integrated circuit (IC) die configured to implement the RF device. The IC die is contained inside a package. In accordance with the embodiments described herein, a flexible circuit is implemented as a lead. Specifically, the flexible circuit lead is coupled to the at least one IC die inside the package and extends to outside the package, the flexible circuit lead thus providing an electrical connection to the at least one IC die inside the package.

APPARATUSES FOR COMMUNICATION SYSTEMS TRANSCEIVER INTERFACES
20170317070 · 2017-11-02 ·

An integrated circuit device for protecting circuits from transient electrical events is disclosed. An integrated circuit device includes a semiconductor substrate having formed therein a bidirectional semiconductor rectifier (SCR) having a cathode/anode electrically connected to a first terminal and an anode/cathode electrically connected to a second terminal. The integrated circuit device additionally includes a plurality of metallization levels formed above the semiconductor substrate. The integrated circuit device further includes a triggering device formed in the semiconductor substrate on a first side and adjacent to the bidirectional SCR. The triggering device includes one or more of a bipolar junction transistor (BJT) or an avalanche PN diode, where a first device terminal of the triggering device is commonly connected to the T1 with the K/A, and where a second device terminal of the triggering device is electrically connected to a central region of the bidirectional SCR through one or more of the metallization levels.

Semiconductor die, semiconductor device and IGBT module

A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.

Transistor arrangement

A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Light-emitting diode and method for manufacturing light-emitting diode

Disclosed are a light-emitting diode and a method for manufacturing a light-emitting diode. The method includes: a base layer; a circuit layer formed on the base layer; a light-emitting chip formed on the circuit layer; electrode pads formed on the base layer and electrically connected to the light-emitting chip so that the electrode pads and the circuit layer and the light-emitting chip are spaced from each other by first spacing distances and the electrode pads and the circuit layer and the light-emitting chip define therebetween first grooves, where an altitude of the electrode pad is equal to an altitude of the light-emitting chip; and a phosphor powder contained package layer formed on the light-emitting chip and the electrode pads and filled into the first grooves between the electrode pads and the circuit layer to form a uniform dome shape.

ELECTRONIC PACKAGE WITH ANTENNA STRUCTURE

Provided is an electronic package, including: a carrier, an electronic component disposed on the carrier, and an antenna structure, wherein the antenna structure has a plurality of spacing members and at least one wire connected among the spacing members. No additional layout area is required to be formed on a surface of the carrier, such that the objective of miniaturization can be achieved.

Semiconductor device and manufacturing method for semiconductor device
11244875 · 2022-02-08 · ·

A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.