This description relates generally to semiconductor devices and processes. A method for forming a packaged semiconductor package can include attaching a front side of a metal layer to a die pad of a leadframe that includes conductive terminals, so a periphery portion of the metal layer extends beyond a periphery pad surface of the die pad, and a portion of a half-etched cavity on the front side of the metal layer is located near the periphery pad surface of the die pad. The method further includes attaching a semiconductor device to the die pad and encapsulating the semiconductor device, the front side of the metal layer, a portion of a back side of the metal layer, and a portion of the conductive terminals to form a packaged semiconductor device.

A transistor includes a wide bandgap semiconductor layer, a gate electrode, a gate pad, and a gate runner. The gate electrode extends to a region where the gate pad is located and a region where the gate runner is located. The gate pad is connected to the gate electrode. The gate runner is connected to the gate electrode. The gate electrode includes a first region connected to the gate pad, a second region connected to the gate runner, and a third region and a fourth region arranged between the first and second regions in different positions in a first direction. In a cross section perpendicular to the first direction, the gate electrode in the fourth region has a cross-sectional area smaller than that of the gate electrode in the third region.

A semiconductor package includes a semiconductor die including circuitry electrically coupled to bond pads that is mounted onto a leadframe. The leadframe includes a plurality of leads and a dam bar having a transverse portion that extends between adjoining ones of the leads. The bond pads are electrically connected to the plurality of leads. A raised dam pattern is on the dam bar or on an edge of an exposed portion of a top side clip of the semiconductor package that is positioned above and connects to the semiconductor die. The raised dam pattern includes a first material that is different relative to the material of the dam bar or the clip. A mold material encapsulates the semiconductor die.

A semiconductor device includes a lead frame comprising a first terminal and a second terminal for grounding, a sealing resin which covers the lead frame, an exposed part which is a part of the second terminal and is exposed from the sealing resin and a conductive material which covers the surface of the sealing resin and contacts the second terminal at the exposed part.

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

This semiconductor module includes: a base plate formed in a plate shape; a terminal member; an electronic component joined to one surface of the base plate; and mold resin sealing the base plate, the terminal member, and the electronic component. The base plate and the terminal member are conductive members and are arranged with an interval therebetween on the same plane. Each of the base plate and the terminal member has a body portion and a terminal portion exposed to outside from the mold resin. The base plate has a through hole at an extension part which is a part extending toward the terminal portion and connected to the terminal portion, in the body portion.

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

A method of manufacturing a semiconductor device is provided. The method includes attaching a first end of a first bond wire to a first conductive lead and a second end of the first bond wire to a first bond pad of a first semiconductor die. A conductive lead extender is affixed to the first conductive lead by way of a conductive adhesive, the lead extender overlapping the first end of the first bond wire. A first end of a second bond wire is attached to the lead extender, the first end of the second bond wire conductively connected to the first end of the first bond wire.

A semiconductor device includes a base having a first surface on which the semiconductor element is mounted and a second surface opposite to the first surface, a first edge portion having a step from the first surface toward the second surface in a first region of a peripheral edge of the base, a first terminal that is arranged at a position facing the first edge portion when viewed from a thickness direction of the base, a conductive member for electrically connecting the semiconductor element and the first terminal to each other, and a resin material for sealing a part of the base, the semiconductor element, and a part of the first terminal.

Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.