A memory device includes an array of memory cells configured on a die or chip and coupled to sense lines and access lines of the die or chip and a respective sense amplifier configured on the die or chip coupled to each of the sense lines. Each of a plurality of subsets of the sense lines is coupled to a respective local input/output (I/O) line on the die or chip for communication of data on the die or chip and a respective transceiver associated with the respective local I/O line, the respective transceiver configured to enable communication of the data to one or more device off the die or chip.

A semiconductor package assembly and a manufacturing method are provided. The semiconductor package assembly includes: a base plate having a first surface; a first chip structure located on the base plate and electrically connected to the first surface of the base plate; an intermediary layer having a first interconnection surface; and a molding compound. The first interconnection surface has a first and second interconnection regions. A first solder ball is formed on the first interconnection region. A first pad is formed on the second interconnection region. The intermediary layer is electrically connected to the first surface by means of the first pad. The molding compound seals the first chip structure, the intermediary layer and the first surface. The first solder ball has a surface exposed from the molding compound. There is a preset height between the exposed surface of the first solder ball and the first interconnection surface.

A semiconductor package including: a first substrate and a semiconductor device on the first substrate, wherein the first substrate includes: a first dielectric layer including a first hole; a second dielectric layer on the first dielectric layer and including a second hole that overlaps the first hole, the second hole being wider than the first hole; an under bump disposed in the first hole and the second hole, the under bump covering a portion of the second dielectric layer; and a connection member bonded to the under bump.

For example, a semiconductor device includes one or more first subcontacts electrically conducted to a substrate. At least one of the one or more first subcontacts is formed in an element arrangement region, and has a lower impedance than the substrate. Preferably, at least one of the one or more first subcontacts is adjacent to a circuit element formed in the element arrangement region. Preferably, on the substrate, which is of a first conductivity type, an epilayer of a second conductivity type is formed, and the one or more first subcontacts include a first line having a lower impedance than the substrate, and a semiconductor region of the first conductivity type penetrating through the epilayer to electrically conduct the first line and the substrate to each other.

A cap is mounted to a support substrate, the cap including a cap body and an optical shutter. The cap and support substrate define a housing. An electronic chip is disposed in the housing above the support substrate. A face of the electronic chip supports an optical device that is optically coupled with the optical shutter. The cap body is thermally conductive. Within the housing, a thermally conductive linking structure is coupled in a thermally conductive manner between the cap body and the electronic chip. The thermally conductive linking structure surrounds the electronic chip. A thermal interface material fills a portion of the housing between the thermally conductive linking structure and the cap body.

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

A semiconductor package assembly includes a substrate, a die stack including at least a bottom die, an inert top spacer, and at least a first inert base spacer. The inert top and base spacers are exclusive of any circuits. A top surface of the inert top spacer is directly attached to a bottom surface of the bottom die in the die stack. A top surface of the first inert base spacer is directly attached to a bottom surface of the inert top spacer and a bottom surface of the first inert base spacer is directly attached to the substrate. The footprint of the inert base spacer is smaller than the footprint of the inert top spacer. In some embodiments, the footprint of the inert base spacer is positioned entirely within the footprint of the inert top spacer.

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

In a semiconductor package in which a semiconductor element is connected to a substrate, the semiconductor element is prevented from being warped. The semiconductor package includes a substrate, the semiconductor element, a bonding portion, and protrusions. First ends of wires are connected to a front surface of the substrate. Second ends of wires are connected to one surface of opposite surfaces of the semiconductor element. The bonding portion bonds a part of the other surface of the opposite surfaces of the semiconductor element and the front surface of the substrate. The protrusions protrude from the front surface of the substrate to a remaining part of the other surface of the opposite surfaces of the semiconductor element.

An integrated circuit package includes a die attach pad (DAP) having a top surface and a layer of insulating material applied to the top surface of the DAP. A silicon-on-insulator (SOI) device is mounted on the insulating material using a die attach paste or film. A plurality of leads are coupled to the SOI device using bond wires. A mold compound covers at least a portion of the DAP and the SOI device. The insulating material may be polyimide or polyamide-imide that has been inkjet printed or screen printed on the DAP. The insulating material may be a parylene material that is applied to the top surface of the DAP using chemical vapor deposition. The insulating material has a thickness of 1-25 um and has a breakdown voltage of approximately 250V/um.