Disclosed is a rectifierless light string that uses bidirectional LEDs. Each LED is illuminated on both the positive and the negative portion of an AC signal so that the AC signal does not have to be rectified. In addition, LEDs are mounted on LED holder plugs, which are designed to allow the LEDs and bypass resistors to be automatically inserted in the LED holder plug. The LED holder plugs are inserted into a light string socket that contains a shunt switch that provides a conduction path when the LED holder plug is not firmly inserted in the light string socket. In this manner, conduction can occur in the light string when the LED holder plug is dislodged.

Provided is a light emitting device that includes a light emitting element having a light emission peak wavelength ranging from 380 nm to 490 nm, and a fluorescent material excited by light from the light emitting element and emitting light having at a light emission peak wavelength ranging from 580 nm or more to less than 680 nm. The light emitting device emits light having a ratio R/B of a photon flux density R to a photon flux density B ranging from 2.0 to 4.0 and a ratio R/FR of the photon flux density R to a photon flux density FR ranging from 0.7 to 13.0, the photon flux density R being in a wavelength range of 620 nm or more and less than 700 nm, the photon flux density B being in a wavelength range of 380 nm or more and 490 nm or less, and the photon flux density FR being in a wavelength range of 700 nm or more and 780 nm or less.

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

A method of packaging light emitting diodes (LEDs) includes molding a lead frame containing a plurality of lead frame fingers that are parallel to each other such that the lead frame fingers are separated from each other by a molded insulating structure to form a molded lead frame, mounting light emitting diodes to at least a portion of the molded lead frame, and dicing the molded lead frame to form a plurality of lead-containing mounting structures. Each of the lead-containing mounting structure includes a respective plurality of leads that are remaining portions of the lead frame, and each of the plurality of leads contains at least one castellation.

A method of manufacturing a metal structure for an optical semiconductor device, including a treatment step (1) of immersing in and/or applying the solution containing a polyallylamine polymer a base body, the base body including an outermost layer at a portion or entire surfaces of the base body, the outermost layer including a plating of at least one selected from the group consisting of gold, silver, a gold alloy, and a silver alloy, so as to manufacture the metal structure for an optical semiconductor device having an increased adhesion to a resin material.

A semiconductor device and a lead frame. The semiconductor device comprises at least one semiconductor chip that is attached to a surface of a base island in a first plane, wherein a connecting rib is connected to the base island, and has a first part which is obliquely connected to the base island; the connecting rib has a second part, and the second part has a surface in a second plane; the second plane is parallel to the first plane and is a plane different from the first plane; the connecting rib has a branch part divided from the second part and the branch part has, in the second plane, a surface used for receiving a lead connected to the semiconductor chip; and the branch part has an edge which is distant from a first edge of the base island by a first distance.

A semiconductor device has a first area in which first and third semiconductor elements are formed, a second area in which second and fourth semiconductor elements are formed, and a third area located between the first and second areas. On the first to fourth semiconductor elements, a multilayer wiring layer including first and second inductors is formed. A through hole penetrating the semiconductor substrate is formed in the third area, and a first element isolation portion protruding from a front surface side of the semiconductor substrate toward a back surface side of the semiconductor substrate is formed in the through hole. Further, on the back surface side of the semiconductor substrate, the semiconductor substrate in the first area is mounted on the first die pad, and the semiconductor substrate in the second area is mounted on the second die pad.

A light emitting diode module includes a first conductive device, a second conductive device, an insulating structure and a plating layer. The first conductive device includes a first metal layer and a first protecting layer covering the first metal layer. The second conductive device includes a second metal layer and a second protecting layer covering the second metal layer. The insulating structure covers around the first and the second conductive devices. The plating layer is disposed on the first and the second protecting layers in a first and a second openings of the insulating structure. The insulating structure covers portions of upper surfaces of the first and the second conductive devices. The plating layer covers remaining portions of the upper surfaces of the first and the second conductive devices. Lower surfaces of the first and the second conductive devices are located in the second opening.