A microelectronic device, in a fan-out fan-in chip scale package, has a die and an encapsulation material at least partially surrounding the die. Fan-out connections from the die extend through the encapsulation material and terminate adjacent to the die. The fan-out connections include wire bonds, and are free of photolithographically-defined structures. Fan-in/out traces connect the fan-out connections to bump bond pads. The die and at least a portion of the bump bond pads partially overlap each other. The microelectronic device is formed by mounting the die on a carrier, and forming the fan-out connections, including the wire bonds, without using a photolithographic process. The die and the fan-out connections are covered with an encapsulation material, and the carrier is subsequently removed, exposing the fan-out connections. The fan-in/out traces are formed so as to connect to the exposed portions of the fan-out connections, and extend to the bump bond pads.

A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

A microelectronic device, in a leaded/leadless chip scale package, has a die and intermediate pads located adjacent to the die. The intermediate pads are free of photolithographically-defined structures. Wire bonds connect the die to the intermediate pads. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Package leads, located outside of the encapsulation material, are attached to the intermediate pads. The microelectronic device is formed by mounting the die on a carrier, and forming the intermediate pads on the carrier without using a photolithographic process. Wire bonds are formed between the die and the intermediate pads. The die, the wire bonds, and the intermediate pads are covered with an encapsulation material, and the carrier is subsequently removed, exposing the intermediate pads. The package leads are attached to the intermediate pads.

A microelectronic device, in a fan-out fan-in chip scale package, has a die and an encapsulation material at least partially surrounding the die. Fan-out connections from the die extend through the encapsulation material and terminate adjacent to the die. The fan-out connections include wire bonds, and are free of photolithographically-defined structures. Fan-in/out traces connect the fan-out connections to bump bond pads. The die and at least a portion of the bump bond pads partially overlap each other. The microelectronic device is formed by mounting the die on a carrier, and forming the fan-out connections, including the wire bonds, without using a photolithographic process. The die and the fan-out connections are covered with an encapsulation material, and the carrier is subsequently removed, exposing the fan-out connections. The fan-in/out traces are formed so as to connect to the exposed portions of the fan-out connections, and extend to the bump bond pads.

A microelectronic device, in a fan-out chip scale package, has a die and an encapsulation material at least partially surrounding the die. The microelectronic device includes bump bond pads adjacent to the die that are exposed by the encapsulation material, the bump bond pads being free of photolithographically-defined structures. Wire bonds connect the die to the bump bond pads. The microelectronic device is formed by mounting the die on a carrier, and forming the bump bond pads adjacent to the die without using a photolithographic process. Wire bonds are formed between the die and the bump bond pads. The die, the wire bonds, and the bump bond pads are covered with an encapsulation material, and the carrier is subsequently removed, exposing the bump bond pads.