A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A method of manufacturing a lead frame includes providing an electrically conductive layer having a plurality of holes at a top surface. The plurality of holes form a structure of leads and a die pad on the electrically conductive layer. The plurality of holes are filled with a non-conductive material. Next; an electrically conductive foil is attached on the top surface of the electrically conductive layer and the non-conductive epoxy material. The, the electrically conductive foil is etched to create a network of leads, die pad, bus lines, dam bars and tie lines, wherein the bus lines connect the leads to the dam bar, the dam bar is connected to the tie line and the tie line is connected to the die pad.

A method of manufacturing a lead frame includes providing an electrically conductive layer having a plurality of holes at a top surface. The plurality of holes form a structure of leads and a die pad on the electrically conductive layer. The plurality of holes are filled with a non-conductive material. Next; an electrically conductive foil is attached on the top surface of the electrically conductive layer and the non-conductive epoxy material. The, the electrically conductive foil is etched to create a network of leads, die pad, bus lines, dam bars and tie lines, wherein the bus lines connect the leads to the dam bar, the dam bar is connected to the tie line and the tie line is connected to the die pad.

Methods, systems, and apparatuses for preventing corrosion between dissimilar bonded metals. The method includes providing a wafer having a plurality of circuits, each of the plurality of circuits having a plurality of bond pads including a first metal; applying a coating onto at least the plurality of bond pads; etching a hole in the coating on each of the plurality of bond pads to provide an exposed portion of the plurality of bond pads; dicing the wafer to separate each of the plurality of circuits; die bonding each of the plurality of circuits to a respective packaging substrate; and performing a bonding process to bond a second, dissimilar metal to the exposed portion of each of the plurality of bond pads such that the second, dissimilar metal encloses the hole in the coating of each of the plurality of bond pads, thereby enclosing the exposed portion.

Various structures and fabrication methods for leadless plastic chip carrier (QFN) packages which utilize carriers in strip format, wherein the leads (or terminals) are formed to be electrically isolated from one another within each unit and in which the units are formed to be electrically isolated from one another within the strip using chemical etching techniques.

Various structures and fabrication methods for leadless plastic chip carrier (QFN) packages which utilize carriers in strip format, wherein the leads (or terminals) are formed to be electrically isolated from one another within each unit and in which the units are formed to be electrically isolated from one another within the strip using chemical etching techniques.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.