This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

A battery system has a battery cell including a can, and a ceramic substrate, including a patterned metallized surface, mounted to the can via a thermally conductive adhesive. The battery system also has a monolithic integrated circuit that measures and transmits data about the cell mounted to the patterned metallized surface such that the ceramic substrate and monolithic integrated circuit are electrically isolated from one another.

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

A method of manufacturing a light emitting module is provided. A plurality of light-emitting diodes are aligned on an elongated base board. By a dispenser, an uncured paste of sealing material is continuously applied on a plurality of light-emitting diodes aligned on the elongated base board. The applied paste of sealing material is cured.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

This disclosure relates to a discrete cascode semiconductor device and associated method of manufacture, the device includes: a high voltage depletion mode device die having gate, source and drain terminals arranged on a first major surface thereof; a low voltage enhancement mode device die having a gate and a source terminal formed on a first major surface thereof, and a drain terminal formed on a second major surface opposite the first major surface. The drain terminal of the high voltage device die is mounted on a drain connection; the source terminal of the low voltage device die and the gate terminal of the high voltage device are mounted on a common source connection; and the drain terminal of the low voltage device die is mounted on the source terminal of the high voltage device.

A semiconductor device includes a chip body; a passivation layer on the chip body; a lower dielectric layer on the passivation layer; a first re-distribution pad on the lower dielectric layer; an upper dielectric layer on the lower dielectric layer, the upper dielectric layer having a groove that exposes an upper surface of the first re-distribution pad; and a second re-distribution pad on the upper dielectric layer. An upper surface of the second re-distribution pad is positioned at a higher level than the upper surface of the first re-distribution pad.

A sensor can comprise a sensor die with a first sensor surface and a second sensor surface opposite to the first sensor surface. The sensor can further comprise a die pad component with a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface. The sensor can further comprise a lead frame component with a first frame surface and a second frame surface opposite to the first frame surface, the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, the second pad surface is isolated from the second frame surface, and the lead frame component is electrically connected to the sensor die.