H01L2224/8482

HIGH VOLTAGE SEMICONDUCTOR PACKAGE WITH PIN FIT LEADS

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad and comprising a first terminal facing away from the die pad and a second terminal facing and electrically connected to the die pad, an interconnect clip electrically connected to the first terminal, an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interconnect clip, and a first opening in the encapsulant body that exposes a surface of the interconnect clip, the encapsulant body comprises a lower surface, an upper surface opposite from the lower surface, and a first outer edge side extending between the lower surface and the upper surface, and the first opening is laterally offset from the first outer edge side.

HIGH VOLTAGE SEMICONDUCTOR PACKAGE WITH PIN FIT LEADS

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad and comprising a first terminal facing away from the die pad and a second terminal facing and electrically connected to the die pad, an interconnect clip electrically connected to the first terminal, an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interconnect clip, and a first opening in the encapsulant body that exposes a surface of the interconnect clip, the encapsulant body comprises a lower surface, an upper surface opposite from the lower surface, and a first outer edge side extending between the lower surface and the upper surface, and the first opening is laterally offset from the first outer edge side.

SEMICONDUCTOR PACKAGES INCLUDING ELECTRICAL REDISTRIBUTION LAYERS OF DIFFERENT THICKNESSES AND METHODS FOR MANUFACTURING THEREOF

A semiconductor package is disclosed. In one example, the package includes a non-power chip including a first electrical contact arranged at a first main surface of the non-power chip. The semiconductor package further includes a power chip comprising a second electrical contact arranged at a second main surface of the power chip. A first electrical redistribution layer coupled to the first electrical contact and a second electrical redistribution layer coupled to the second electrical contact. When measured in a first direction vertical to at least one of the first main surface or the second main surface, a maximum thickness of at least a section of the first electrical redistribution layer is smaller than a maximum thickness of the second electrical redistribution layer.

Multi-clip structure for die bonding

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

Multi-clip structure for die bonding

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

High voltage semiconductor package with pin fit leads

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad and comprising a first terminal facing away from the die pad and a second terminal facing and electrically connected to the die pad, an interconnect clip electrically connected to the first terminal, an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interconnect clip, and a first opening in the encapsulant body that exposes a surface of the interconnect clip, the encapsulant body comprises a lower surface, an upper surface opposite from the lower surface, and a first outer edge side extending between the lower surface and the upper surface, and the first opening is laterally offset from the first outer edge side.

High voltage semiconductor package with pin fit leads

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad and comprising a first terminal facing away from the die pad and a second terminal facing and electrically connected to the die pad, an interconnect clip electrically connected to the first terminal, an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interconnect clip, and a first opening in the encapsulant body that exposes a surface of the interconnect clip, the encapsulant body comprises a lower surface, an upper surface opposite from the lower surface, and a first outer edge side extending between the lower surface and the upper surface, and the first opening is laterally offset from the first outer edge side.

PACKAGE WITH CLIP HAVING THROUGH HOLE ACCOMMODATING COMPONENT-RELATED STRUCTURE

A package and method of manufacturing is disclosed. In one example, the package which comprises a carrier with at least one component mounted on the carrier. A clip is arranged above the carrier and having a through hole. At least part of at least one of the at least one component and/or at least part of an electrically conductive connection element electrically connecting the at least one component is at least partially positioned inside the through hole.

Component module and power module
10741474 · 2020-08-11 · ·

The disclosed component module includes a component comprising at least one electric contact to which at least one porous contact piece is connected; the component module further includes a cooling system for fluid-based cooling, said cooling system comprising one or more cooling ducts which are formed by pores of the porous contact piece. The disclosed power module comprises a component module of said type.

Multi-Clip Structure for Die Bonding
20200105707 · 2020-04-02 ·

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.