A display panel (10) and an electronic device are provided. The display panel (10) includes a base substrate, a low-display-density region (200), a transition region (300) and a high-display-density region (400), the low-display-density region (200), the transition region (300) and the high-display-density region (400) being located on the base substrate. The transition region (300) is located between the low-display-density region (200) and the high-display-density region (400). The low-display-density region (200), the transition region (300) and the high-display-density region (400) are provided with pixel units (101) for emitting light, respectively. A display density of the low-display-density region (200) is less than a display density of the transition region (300), and the display density of the transition region (300) is less than a display density of the high-display-density region (400). Therefore, a clear border between the high-display-density region (400) and the low-display-density region (200) is avoided, and a display effect of the display panel (10) and the electronic device is ensured.

A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is made of ceramic, is thermally connected to a heat dissipation surface of the Peltier element, and accommodates the Peltier element and the sensor element.

A light receiving element according to the present disclosure includes a sensor substrate (102) and a circuit board (101). The sensor substrate (102) is provided with a light receiving region (103), a pair of voltage application electrodes, and an incident surface electrode (104). The light receiving region (103) photoelectrically converts incident light into signal charges. A voltage is alternately applied to the pair of voltage application electrodes to generate, in the light receiving region (103), an electric field that time-divides the signal charges and distributes the signal charges to a pair of charge accumulation electrodes. The incident surface electrode (104) is provided on an incident surface of light in the light receiving region (103), and a voltage equal to or lower than a ground potential is applied to the incident surface electrode. The circuit board (101) is provided on a surface facing the incident surface of the light, of the sensor substrate (102). The circuit board (101) is provided with a pixel transistor that processes the signal charges accumulated in the charge accumulation electrodes.

A detection device includes a plurality of detection elements arranged in a matrix having a row-column configuration in a detection area, a plurality of scan lines each coupled to the detection elements arranged in a first direction, a drive circuit configured to drive the scan lines, a plurality of output signal lines each coupled to the detection elements arranged in a second direction different from the first direction, and a detection circuit configured to be supplied with detection signals from the detection elements through the output signal lines.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

A semiconductor package may include an image sensor chip, a transparent substrate spaced apart from the image sensor chip, a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip, and a circuit substrate electrically connected to the image sensor chip. The image sensor chip may include a penetration electrode which penetrates at least a portion of an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is connected to the penetration electrode. The joining structure may include a spacer and an adhesive layer which is between and attached to the spacer and the image sensor chip. The joining structure may the terminal pad.

An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

A device for luminescent imaging includes an array of imaging pixels, a photonic structure over the array of imaging pixels, and an array of features over the photonic structure. A first feature of the array of features is over a first pixel of the array of imaging pixels, and a second feature of the array of features is over the first pixel and spatially displaced from the first feature. A first luminophore is within or over the first feature, and a second luminophore is within or over the second feature. The device includes a radiation source to generate first photons having a first characteristic at a first time, and generate second photons having a second characteristic at a second time. The first pixel selectively receives luminescence emitted by the first and second luminophores responsive to the first photons at the first time and second photons at the second time, respectively.

The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

The incidence of incident light transmitted through a photoelectric conversion unit onto a charge holding unit, a pixel in the adjacency, and the like can be blocked in a pixel. An image sensor includes a pixel, a wiring layer, and an incident light attenuation unit. The pixel includes a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion based on incident light, and a pixel circuit that generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate different from a surface onto which the incident light is incident, and transports either the image signal or a signal applied to the pixel circuit. The incident light attenuation unit attenuates the incident light transmitted through the photoelectric conversion unit.