Metasurface elements, integrated systems incorporating such metasurface elements with light sources and/or detectors, and methods of the manufacture and operation of such optical arrangements and integrated systems are provided. Systems and methods for integrating transmissive metasurfaces with other semiconductor devices or additional metasurface elements, and more particularly to the integration of such metasurfaces with substrates, illumination sources and sensors are also provided. The metasurface elements provided may be used to shape output light from an illumination source or collect light reflected from a scene to form two unique patterns using the polarization of light. In such embodiments, shaped-emission and collection may be combined into a single co-designed probing and sensing optical system.

A semiconductor package may include an image sensor chip, a transparent substrate spaced apart from the image sensor chip, a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip, and a circuit substrate electrically connected to the image sensor chip. The image sensor chip may include a penetration electrode which penetrates at least a portion of an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is connected to the penetration electrode. The joining structure may include a spacer and an adhesive layer which is between and attached to the spacer and the image sensor chip. The joining structure may the terminal pad.

A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation. In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.

Photosensors may be formed on a front side of a semiconductor substrate. An optical refraction layer having a first refractive index may be formed on a backside of the semiconductor substrate. A grid structure including openings is formed over the optical refraction layer. A masking material layer is formed over the grid structure and the optical refraction layer. The masking material layer may be anisotropically etched using an anisotropic etch process that collaterally etches a material of the optical refraction layer and forms non-planar distal surface portions including random protrusions on physically exposed portions of the optical refraction layer. An optically transparent layer having a second refractive index that is different from the first refractive index may be formed on the non-planar distal surface portions of the optical refraction layer. A refractive interface refracts incident light in random directions, and improves quantum efficiency of the photosensors.

The present disclosure provides an electronic apparatus capable of capturing an image without being affected by an abnormality on a display surface.

The electronic apparatus includes: a display unit; an imaging unit that is disposed on an opposite side to a display surface of the display unit; an abnormality detection unit that detects an abnormality on the display surface; and a display control unit that highlights a position where the abnormality detected by the abnormality detection unit occurs on the display unit.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

An image sensing device is disclosed. The image sensing device includes a pixel array including a plurality of unit pixels, each of which is configured to generate a pixel signal in response to incident light. The pixel array includes a substrate layer including a plurality of photoelectric conversion elements configured to convert the incident light into an electric signal, a plurality of microlenses formed over the substrate layer to respectively correspond to the photoelectric conversion elements, and configured to converge the incident light into the corresponding photoelectric conversion elements, a plurality of color filters disposed between the plurality of photoelectric conversion elements and the plurality of microlenses and configured to transmit light at predetermined wavelengths to corresponding photoelectric conversion elements, and one or more grid structures disposed over the substrate layer at intervals to separate the microlenses and the color filters from adjacent microlenses and the color filter. The grid structures have different heights at different locations in the pixel array such that one or more of the grid structure include a top portion protruding from a top surface of an abutting microlens.

An optical filter for an image sensor includes first opaque zones. Each of the first opaque zones occupies a surface area equal to the surface area of at least one first lens in this same first zone.

A polarization imager is provided that includes a plurality of CMOS photodetectors and a plurality of polarization filters. Each of the plurality of CMOS photodetectors has a photodiode that is configured to operate in forward bias mode. Further, each of the plurality of polarization filters is monolithically integrated with a corresponding one of the plurality of CMOS photodetectors. Each of the plurality of photodiodes exhibits a logarithmic response to a flux of incident photons. The polarization imager achieves a dynamic range of at least 100 decibels with a signal-to-noise ratio of at least 60 decibels.

An imaging apparatus with reduced flare includes an imaging structure including a solid state imaging element (1) and a transparent substrate (2) disposed on the imaging element. The imaging apparatus includes a circuit substrate (7) including a circuit, a spacer (10) including at least one fixing portion (11) that guides the imaging structure to a desired position on the circuit substrate (7) when the imaging structure is mounted on the circuit substrate, and a light absorbing material (13) disposed on at least one side surface of the imaging structure such that that light absorbing material (13) is between the imaging structure and the at least one fixing portion.