The sensor chip stack comprises a sensor substrate of a semiconductor material including a sensor, a chip fastened to the sensor substrate, the chip including an integrated circuit, electric interconnections between the sensor substrate and the chip, electric terminals of the chip, the chip being arranged between the electric terminals and the sensor substrate, and a molding material arranged adjacent to the chip, the electric terminals of the chip being free from the molding material.

Some embodiments provide a color image sensor and color image sampling method that uses multiple-layer pixels and is capable of producing color images without using absorption color filters (e.g., such as employed in conventional CFAs). In accordance with some embodiments of the color image sensor device and color image sampling method, frequency-dependent reflectors are incorporated between the photodetection layers of multiple-layer (e.g., two layer) pixels.

The present disclosure relates to a solid state imaging device and an electronic device from which a holding unit for holding information in a pixel can be eliminated. When a charge distribution unit distributes a pixel signal SIG to a first ADC, a pixel signal representing only reflection light is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a second ADC, a pixel signal representing background light and reflection light (partial) is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a third ADC, a pixel signal representing background light and reflection light (the rest) is divided for allocation. During a period in which no signal is acquired, a discharge transistor functions as an overflow portion for releasing electrical charge. The present disclosure can be applied to, for example, a solid state imaging device used for an imaging device.

An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

In a solid-state imaging device, a first substrate has a plurality of pixels and a plurality of first control signal lines. The plurality of first control signal lines are connected to pixels of each row. The second substrate includes a plurality of second control signal lines and a control circuit. The arrangement of each of the plurality of second control signal lines on the second substrate corresponds to the arrangement of a corresponding one of the plurality of first control signal lines on the first substrate. The connection portion has a plurality of control connections and a plurality of readout connections. Each of the plurality of control connections is connected to one of the plurality of first control signal lines and a corresponding one of the plurality of second control signal lines.

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

A sensor package structure includes a substrate, a sensor chip disposed on the substrate, several metal wires electrically connected to the substrate and the sensor chip, a translucent layer corresponding in position to the sensor chip, and an adhesive. A top surface of the sensor chip has a sensing region and a spacing region around the sensing region. The sensor chip includes several connecting pads arranged on a first portion of the top surface between the first edge and the spacing region, and a second portion of the top surface between the second edge and the spacing region is provided without any connecting pad. The width of the first portion is greater than that of the second portion. The adhesive covers the surrounding side of the sensor chip, the first portion, and the surrounding side of the translucent layer. Part of each metal wire is embedded in the adhesive.

A sensor package structure includes a substrate, a sensor chip disposed on the substrate, several metal wires electrically connected to the substrate and the sensor chip, a translucent layer corresponding in position to the sensor chip, a combining layer firmly fixing the translucent layer to the sensor chip, and a packaging compound. A top surface of the sensor chip has a sensing region and a spacing region around the sensing region. The sensor chip includes several connecting pads arranged on the top surface between at least part of the edges thereof and the spacing region. The translucent layer has a fixing region arranged outside a portion thereof adhered to the combining layer. The packaging compound covers the fixing region and the external sides of the sensor chip, the combining layer, and the translucent layer. Each metal wire is embedded in the combining layer and the packaging compound.

An array imaging module includes a molded photosensitive assembly which includes a supporting member, at least a circuit board, at least two photosensitive units, at least two lead wires, and a mold sealer. The photosensitive units are coupled at the chip coupling area of the circuit board. The lead wires are electrically connected the photosensitive units at the chip coupling area of the circuit board. The mold sealer includes a main mold body and has two optical windows. When the main mold body is formed, the lead wires, the circuit board and the photosensitive units are sealed and molded by the main mold body of the mold sealer, such that after the main mold body is formed, the main mold body and at least a portion of the circuit board are integrally formed together at a position that the photosensitive units are aligned with the optical windows respectively.