An apparatus, system and method suitable for detecting X-ray are disclosed. In one example, the apparatus comprises: an X-ray absorption layer and a mask; wherein the mask comprises a first window and a second window, and a portion between the first window and the second window; wherein the first and second windows are not opaque to an incident X-ray; wherein the portion is opaque to the incident X-ray; and wherein the first and second windows are arranged such that charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the first window and charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the second window do not spatially overlap.

An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.

An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer, and a charge storage region. The photoelectric conversion layer is located between the first electrode and the second electrode. The charge storage region is electrically connected to the first electrode. An area of the charge storage region in plan view is smaller than or equal to 0.01 .Math.m.sup.2.

A radiation shielding system for an x-ray digital detector array includes a first radiation shield having a plurality of shielding pads and a plurality of interstices between the plurality of shielding pads, the plurality of shielding pads having a greater thickness than the thickness of the plurality of interstices. The plurality of shielding pads is configured to be positioned over active components of the x-ray digital detector array and the interstices are configured to be positioned over passive components of the x-ray digital detector array.

Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a substrate, and which includes a protective film formed on the surface of a substrate having a pad electrode, a buffer layer formed on the protective film and composed of a precious metal material or an oxide material, a photoconductive layer formed on the buffer layer, and an upper electrode formed on the photoconductive layer.

Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.

A detector slice circuit for a CT imaging system may include a plurality of sensors for detecting photons passing through an object and a first electronic component configured to determine an energy of photons detected by the plurality of sensors and generate photon count data, which may be a count of detected photons in one or more energy bins. The detector slice circuit may further include a second electronic component configured to receive the photon count data from the first electronic component and is clocked at a first clock rate; a local memory storage configured to receive the photon count data from the second electronic component at the first clock rate and to output the photon count data at a second clock rate.

Embodiments of the disclosure provide a ray detector, which comprises a ray conversion layer for converting a ray incident on the ray detector into visible light, a photoelectric conversion layer for receiving the visible light and converting it into a charge signal, a pixel array having a plurality of pixels for detecting the charge signal, and a substrate below the photoelectric conversion layer, at least for directly or indirectly carrying the photoelectric conversion layer. The photoelectric conversion layer is made from a two-dimensional semiconductor material. Due to the high carrier mobility of the two-dimensional semiconductor material, it is possible to enable the external signal processing system to detect the charge signal more easily, so that a ray source with low energy can be used for ray detection. Therefore, a ray detector with high sensitivity can be provided, which may reduce the is usage cost and be advantageous to saving energy.

The invention relates to a two steps image capture panel for recording x-ray image information. More particularly, the invention relates to a method and an apparatus for directing the internal electric field to capture the x-ray image first on an insulating surface, avoiding charge injection noise from the insulating surface, and then re-directing the internal electrical field to transfer the image charge from the insulating surface to a conductive readout electrode with electric field sufficient for charge gain during image readout.

A thin film transistor substrate (2) includes: an auxiliary capacitor electrode (7); a gate insulating film (8) formed on an insulating substrate (4) to cover the auxiliary capacitor electrode (7); a drain electrode (11) formed on the gate insulating film (8) and an oxide semiconductor layer (9); a planarization film (13) formed on a passivation film (12); a capacitor electrode (14) formed on the planarization film (13); an interlayer insulating film (16) formed on the planarization film (13); and a pixel electrode (17) formed on the interlayer insulating film (16) and electrically connected to the drain electrode (11) via a contact hole (18).