A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 μm or at least 20 μm with respect to each highly doped semiconductor contact region.

The present technology relates to an imaging device of global shutter type, and relates to an imaging device and electronic equipment capable of inhibiting interference between a photoelectric conversion unit and an element that holds charge that has been transferred from the photoelectric conversion unit. An imaging device includes, in a pixel: a photoelectric conversion unit; a charge transfer unit; an electrode that is used to transfer charge from the photoelectric conversion unit to the charge transfer unit; a charge-voltage conversion unit; and a charge drain unit. Here, the charge transfer unit is allowed to transfer charge in a first transfer direction to the charge-voltage conversion unit and a second transfer direction to the charge drain unit. The present technology can be applied to, for example, a CMOS image sensor of global shutter type.

Disclosed herein is a method for making a radiation detector. The method comprises forming a recess into a substrate and forming a semiconductor single crystal in the recess. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The method further comprises forming electrical contacts on the semi conductor single crystal and bonding the substrate to another substrate comprising an electronic system therein or thereon. The electronic system is connected to the electrical contact of the semiconductor single crystal and configured to process an electrical signal generated by the semiconductor single crystal upon absorption of radiation particles.

A hybrid radiation imaging sensor includes a low x-ray attenuating substrate, a photoconductor disposed over the substrate, and a scintillator disposed over the photoconductor. By combining direct x-ray conversion to electron-hole pairs in the photo-conductor with indirect conversion of x-rays downstream of the photoconductor within the scintillator, improved x-ray imaging can be attained through an electronic readout located upstream of both the photoconductor and the scintillator without the need for excessive x-ray dosing.

The present disclosure provides a flat panel detector and a medical image detection device. The flat panel detector includes a base substrate, wherein the base substrate is divided into a plurality of detection units, each detection unit includes a first absorbing layer and a second absorbing layer, both of which are arranged on the base substrate in a laminating manner, the second absorbing layer is located on one side, away from the base substrate, of the first absorbing layer, and an energy level of rays absorbed by the second absorbing layer is smaller than that of rays absorbed by the first absorbing layer; a voltage supply electrode structure; and an output circuit, electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorbing layer and a second detection signal of the second absorbing layer.

A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a parallel plate plasma chemical vapor deposition chamber to control a temperature of a showerhead in the deposition chamber in the range of 350° C. to 600° C. An anode in the deposition chamber is cooled to maintain a temperature in the range of 50° C. to 450° C. at the substrate that is positioned at the anode. In the apparatus, a heater is embedded within the earth shield and a cooling system is embedded within the anode.

Example embodiments generally relate to a detector for electromagnetic radiation such as a detector comprising a first, pixelated electrode layer comprising a plurality of electrode pixels, a first layer comprising a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation, and a second electrode layer, as well as a method of producing a detector for electromagnetic radiation, comprising providing a first, pixelated electrode layer comprising a plurality of electrode pixels, applying a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation on the first, pixelated electrode layer, and applying a second electrode layer on the first layer.

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface of the sensing layer.

Disclosed herein is a radiation detector comprising: a substrate of an intrinsic semiconductor; a semiconductor single crystal in a recess in the substrate, the semiconductor single crystal having a different composition from the intrinsic semiconductor; a first electrical contact in electrical contact with the semiconductor single crystal; a second electrical contact on or in the substrate, and surrounding the first electrical contact or the semiconductor single crystal, wherein the second electrical contact is electrically isolated from the semiconductor single crystal; wherein the radiation detector is configured to absorb radiation particles incident on the semiconductor single crystal and to generate charge carriers.

The present disclosure relates to an optical detection panel. The optical detection panel may include a first substrate and a second substrate opposite the first substrate, a photosensitive component and a driving thin film transistor at a side of the second substrate facing the first substrate, a first electrode and a second electrode at a side of the second substrate facing the first substrate, and a plurality of microlenses at a side of the photosensitive component opposite from the second substrate. The second electrode may be connected to the driving thin film transistor.