A detection device includes a plurality of detection elements that are arranged in a matrix having a row-column configuration in a detection area, and each comprise a photoelectric conversion element to which a reverse bias voltage is configured to be applied when detection is performed, and an initialization circuit configured to apply an initialization voltage higher than the reverse bias voltage to the photoelectric conversion element before the reverse bias voltage is applied to the photoelectric conversion element.

A mobile terminal according to an embodiment includes a display panel having flexibility, and a support plate configured to support the display panel and to include a curved edge, at least a part of which is surrounded by the display panel. The display panel includes a base substrate, a light-emitting layer provided on the base substrate and configured to include a light-emitting element, a thin-film encapsulation layer configured to seal the light-emitting element, and a thin-film transistor (TFT) film configured to supply a signal to the light-emitting element, a polarizing film provided on the light-emitting layer, and a protective film provided on the polarizing film. The TFT film is extended from the base substrate at the curved edge to cover an edge of the base substrate.

A display device includes: a substrate; an insulating layer on a top surface of the substrate; a plurality of light-emitting diodes on the insulating layer and including two light-emitting diodes spaced apart from each other and having a transmission area therebetween; an encapsulation member covering the plurality of light-emitting diodes; and a rear cover layer located on a rear surface of the substrate and including a first portion located in the transmission area, wherein the first portion includes a transparent material.

A display device includes a display module having a folding area and a non-folding area adjacent to the folding area. A glass substrate is disposed on the display module and comprises a first layer and a second layer disposed on the first layer. The second layer has a compressive strength that is higher than a compressive strength of the first layer. The first layer and the second layer of the glass substrate each include a folding portion overlapping the folding area and having a first thickness and a non-folding portion overlapping the non-folding area and having a second thickness greater than the first thickness. The second layer of the non-folding portion has a thickness that is greater than a thickness of the second layer of the folding portion.

A unit cell for use in an optical active pixel sensor (APS) includes a photodiode having a first terminal connected to a photodiode biasing PDB line, and a second terminal opposite from the first terminal; a reset switch transistor having a first terminal connected to the second terminal of the photodiode, and a second terminal connected to a reference voltage line, and a gate of the reset switch transistor is connected to a reset signal RST supply line; and an amplification transistor having a first terminal connected to an output readout line, and a second terminal connected to a driving voltage supply line, and a gate of the amplification transistor is connected to a node constituting the connection of the second terminal of the photodiode and the first terminal of the reset switch transistor. An optical APS device includes a sensor matrix formed of a plurality of unit cells according to any of the embodiments arranged in an array of rows and columns.

A display panel includes an array substrate, a protective cover, a fingerprint identification circuit, and an optical structure. The array substrate and the protective cover are disposed oppositely, where the protective cover is located at a light exiting side of the array substrate. The fingerprint identification circuit is located at a side of the array substrate facing away or toward the protective cover and is configured to receive detection light and perform a fingerprint detection according to the detection light. The optical structure is located at a side of the protective cover facing away from the array substrate and is configured to increase a reflection amount of the detection light received by the fingerprint identification circuit.

A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.

Provided is a display panel including a main display area, a component area having a transmissive area, a peripheral area outside the main display area, a substrate, a bottom metal layer on the substrate, and defining an opening corresponding to the transmissive area, a valley portion adjacent to a boundary between the bottom metal layer and the transmissive area, and a thin-film encapsulation layer on the valley portion, and including an inorganic layer and an organic layer.

According to one embodiment, a display device includes a first substrate, a second substrate facing the first substrate and a liquid crystal layer. The first substrate includes a base material, and a sensor which outputs a detection signal based on incident light from a liquid crystal layer side. The sensor includes a photoelectric conversion element including a first surface and a second surface, a first electrode which is in contact with the first surface, and a second electrode which is in contact with the second surface. Each of the photoelectric conversion element and the second electrode is formed in an irregular shape having a plurality of curved portions and a plurality of straight portions connecting the curved portions as seen in plan view.

A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.