Implementations of a molded image sensor chip scale package may include an image sensor having a first side and a second side. A first cavity wall and a second cavity wall may be coupled to the first side of the image sensor and extend therefrom. The first cavity wall and the second cavity wall may form a cavity over the image sensor. A transparent layer may be coupled to the first cavity wall and the second cavity wall. A redistribution layer (RDL) may be coupled to the second side of the image sensor. At least one interconnect may be directly coupled to the RDL. A mold material may encapsulate a portion of the RDL, a portion of the image sensor, and a side of each cavity wall, and a portion of the transparent layer.

A method for forming a contact pad of a semiconductor device is disclosed. The method includes providing a semiconductor substrate including a first side and a second side. The semiconductor device includes a shallow trench isolation structure, disposed between the first side and the second side, and an intermetal dielectric stack coupled to the second side. The intermetal dielectric stack includes a first metal interconnect. The method further includes etching a first trench into the semiconductor substrate, depositing a dielectric material into the first trench to form a dielectric spacer extending along side walls of the first trench, etching a second trench aligned with the first trench, and depositing a metal material into the second trench to form the contact pad that contacts the first metal interconnect.

A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

A method of fabricating CMOS image sensors is disclosed. In contrast to traditional fabrication processes, the present sequence implants dopants into the epitaxial layer from both the first surface and the second surface. Because dopant is introduced through both sides, the maximum implant energy to perform the implant may be reduced by as much as 50%. In certain embodiments, the second implant is performed prior to the application of the electrical contacts. In another embodiments, the second implant is performed after the application of the electrical contacts. This method may allow deeper photodiodes to be fabricated using currently available semiconductor processing equipment than would otherwise be possible.

To prevent peeling at an interface between layers forming a layer structure of a solid-state imaging element even in a case where stress is caused by an increase in pressure in a cavity in a configuration in which a translucent member is provided on the solid-state imaging element with a support portion interposed therebetween and the cavity is formed between the solid-state imaging element and the translucent member. There are included a solid-state imaging element, the light-receiving side of which corresponds to one of plate surface sides of a semiconductor substrate; a translucent member provided on the light-receiving side of the solid-state imaging element at a predetermined distance therefrom; and a support portion that forms a cavity between the solid-state imaging element and the translucent member, in which the solid-state imaging element has a layer structure provided on the light-receiving side of the semiconductor substrate, the layer structure including a first layer, a second layer, and a third layer, the second layer being different in material from the first layer, the third layer being different in material from the first layer and formed in the second layer, and the third layer has a protrusion-and-recess shape portion at least in a region where the support portion is formed in a planar direction along the plate surface of the semiconductor substrate, the protrusion-and-recess shape portion forming an interface between the second layer and the third layer in a protrusion-and-recess shape.

Disclosed herein is a method of producing an infrared detector. In certain embodiments, the method includes: forming a planar multi-layer structure including an absorber including a superlattice structure; patterning the planar multi-layer structure; etching the planar multi-layer structure to define a plurality of pixels, the sidewalls of the plurality of pixels includes a sidewall roughness and multiple types of surface oxides; and performing a surface treatment process to the plurality of pixels in order to reduce the sidewall roughness and replace the surface oxides with a chlorinated surface morphology. The surface treatment process may reduce surface current of the infrared detector which may decrease the dark current in the infrared detector.

A method includes forming a plurality of identical arrays on a semiconductor wafer, each array having a plurality of detectors, screening each of the plurality of arrays to determine an operational status of each of the plurality of arrays, and selecting one of the plurality of arrays for use based on the determination of the operational status of the plurality of arrays. Also described is a focal plane array including a circuit having a plurality of electrical contacts and a die including a plurality of identical arrays, each including a plurality of detectors. The plurality of identical arrays includes at least one selected array that is fully functional and at least one non-selected array that is not fully functional and the selected array is positioned with respect to the circuit so that the detectors of the selected array contact the plurality of electrical contacts of the circuit.

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

An imaging element including a plurality of semiconductor chips which are bonded together is prevented from being damaged._The imaging element includes the plurality of semiconductor chips each including a semiconductor substrate and a wiring region. One of the plurality of semiconductor chips is disposed with a photoelectric conversion unit that performs photoelectric conversion of incident light. Two of the plurality of semiconductor chips each includes a first pad, surfaces of the wiring regions of the two semiconductor chips being bonded together, the first pads being disposed on the respective surfaces of the wiring regions and being joined to each other. At least one of the two semiconductor chips further includes a second pad disposed in the wiring region and an insulating film disposed between the second pad and the surface for bonding, the second pad being formed with a protrusion toward the surface for bonding.

An integrated circuit comprises a substrate composed of crystalline semiconductor. An optoelectronic device is formed at the substrate and includes a plurality of transducers. A thin-film semiconductor layer is situated over the optical device, and circuitry is formed at the thin-film semiconductor layer. The circuitry may include a plurality of transistors electrically coupled to the optoelectronic device by a set of layer interconnects.