The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.

This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.

There is disclosed herein clock generation circuitry, in particular rotary travelling wave oscillator circuitry. Such circuitry comprises a pair of signal lines connected together to form a dosed loop and arranged such that they define at least one transition section where both said lines in a first portion of the pair cross from one lateral side of both said lines in a second portion of the pair to the other lateral side of both said lines in the second portion of the pair.

The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.

This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.

Disclosed are circuits and methods for increasing an output frequency of an inductance-capacitance (LC) oscillator. In some embodiments, the LC oscillator can be implemented as a voltage-controlled oscillator (VCO) having differential outputs. When the VCO is implemented on a die, wirebond connections from the outputs to a ground results in an effective inductance that impacts a maximum frequency associated with the VCO. An electrical connection such as a wirebond between the differential outputs yields a reduction in the effective inductance thereby increasing the maximum frequency. In some embodiments, the wirebond between the differential outputs can be configured so that its contribution to mutual inductance is reduced or substantially nil.

This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.

There is disclosed herein clock generation circuitry, in particular rotary travelling wave oscillator circuitry. Such circuitry comprises a pair of signal lines connected together to form a closed loop and arranged such that they define at least one transition section where both said lines in a first portion of the pair cross from one lateral side of both said lines in a second portion of the pair to the other lateral side of both said lines in the second portion of the pair.

This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.

Disclosed are circuits and methods for increasing an output frequency of an inductance-capacitance (LC) oscillator. In some embodiments, the LC oscillator can be implemented as a voltage-controlled oscillator (VCO) having differential outputs. When the VCO is implemented on a die, wirebond connections from the outputs to a ground results in an effective inductance that impacts a maximum frequency associated with the VCO. An electrical connection such as a wirebond between the differential outputs yields a reduction in the effective inductance thereby increasing the maximum frequency. In some embodiments, the wirebond between the differential outputs can be configured so that its contribution to mutual inductance is reduced or substantially nil.