Patent classifications
H01L2924/15155
METHOD OF MANUFACTURING CIRCUIT BOARD
A method of manufacturing a circuit board is provided. The method includes forming an open substrate, in which the open substrate includes a substrate body having a top surface and a bottom surface; an opening in the substrate body, in which the opening has a first sidewall and a second sidewall opposite to the first sidewall; and at least one first fixing portion and at least one second fixing portion extending from the substrate body toward the opening, in which the first fixing portion and the second fixing portion are respectively protruded from the first sidewall and the second sidewall. A heat dissipation block is inserted in the opening to clamp the heat dissipation block between the first fixing portion and the second fixing portion, in which the heat dissipation block includes the heat dissipation block comprises a ceramic or a composite material.
POWER TUBE CONNECTION STRUCTURE OF POWER AMPLIFIER AND POWER AMPLIFIER
A power tube connection structure includes a substrate, a printed circuit board, and a power tube, where a through groove allowing the power tube to pass through is cut into the printed circuit board, a mounting groove is cut into the upper surface of the substrate at a location corresponding to the through groove, one end of the power tube extends through the through groove, and is welded onto a bottom face of the mounting groove, the end of the power tube that extends into the mounting groove abuts onto a side wall of the mounting groove close to an output end of the power amplifier, and a solder flux escape channel is made into the side wall of the mounting groove close to the output end of the power amplifier.
Package for power semiconductor devices
In a described example, an apparatus includes: a first mold compound partially covering a thermal pad that extends through a pre-molded package substrate formed of a first mold compound, a portion of the thermal pad exposed on a die side surface of the pre-molded package substrate, the pre-molded package substrate having a recess on the die side surface, with an exposed portion of the thermal pad and a portion of the first mold compound in a die mounting area in the recess; a semiconductor die mounted to the thermal pad and another semiconductor die mounted to the mold compound in the die mounting area; wire bonds coupling bond pads on the semiconductor dies to traces on the pre-molded package substrate; and a second mold compound over the die side surface of the pre-molded package substrate and covering the wire bonds, the semiconductor dies, the recess, and a portion of the traces.
PACKAGE FOR POWER SEMICONDUCTOR DEVICES
In a described example, an apparatus includes: a first mold compound partially covering a thermal pad that extends through a pre-molded package substrate formed of a first mold compound, a portion of the thermal pad exposed on a die side surface of the pre-molded package substrate, the pre-molded package substrate having a recess on the die side surface, with an exposed portion of the thermal pad and a portion of the first mold compound in a die mounting area in the recess; a semiconductor die mounted to the thermal pad and another semiconductor die mounted to the mold compound in the die mounting area; wire bonds coupling bond pads on the semiconductor dies to traces on the pre-molded package substrate; and a second mold compound over the die side surface of the pre-molded package substrate and covering the wire bonds, the semiconductor dies, the recess, and a portion of the traces.
Light emitting device and fluidic manufacture thereof
Light emitting devices and methods for their manufacture are provided. According to one aspect, a light emitting device is provided that comprises a substrate having a recess, and an interlayer dielectric layer located on the substrate. The interlayer dielectric layer may have a first hole and a second hole, the first hole opening over the recess of the substrate. The light emitting device may further include first and second micro LEDs, the first micro LED having a thickness greater than the second micro LED. The first micro LED and the second micro LED may be placed in the first hole and the second hole, respectively.
Substrate having electronic component embedded therein
A substrate having an electronic component embedded therein includes a core structure including a first insulating body and a plurality of core wiring layers disposed on or in the first insulating body, and having a cavity penetrating at least a portion of the first insulating body in a thickness direction of the substrate and including a stopper layer as a bottom surface of the cavity, and an electronic component disposed in the cavity and attached to the stopper layer, and a surface of the stopper layer connected to the electronic component has a composite including at least two among a metal material, an inorganic particle, a filler, and an insulating resin.
PACKAGE FOR POWER SEMICONDUCTOR DEVICES
In a described example, an apparatus includes: a first mold compound partially covering a thermal pad that extends through a pre-molded package substrate formed of a first mold compound, a portion of the thermal pad exposed on a die side surface of the pre-molded package substrate, the pre-molded package substrate having a recess on the die side surface, with an exposed portion of the thermal pad and a portion of the first mold compound in a die mounting area in the recess; a semiconductor die mounted to the thermal pad and another semiconductor die mounted to the mold compound in the die mounting area; wire bonds coupling bond pads on the semiconductor dies to traces on the pre-molded package substrate; and a second mold compound over the die side surface of the pre-molded package substrate and covering the wire bonds, the semiconductor dies, the recess, and a portion of the traces.
Stacked semiconductor package with flyover bridge
According to various examples, a device is described. The device may include a package substrate. The device may also include a plurality of semiconductor devices disposed on the package substrate, wherein the plurality of semiconductor devices comprises top surfaces and bottom surfaces. The device may also include a plurality of interconnects coupled to the package substrate, wherein the plurality of interconnects are adjacent to the plurality of semiconductor devices. The device may also include a flyover bridge coupled to the top surfaces of the plurality of semiconductor devices and the plurality of interconnects, wherein the flyover bridge is directly coupled to the package substrate by the plurality of interconnects, and wherein the bottom surfaces of the plurality of semiconductor devices are electrically isolated from the package substrate.
Circuit board having heat-dissipation block and method of manufacturing the same
A circuit board includes an open substrate and a heat dissipation block. The open substrate includes a substrate body, an opening and at least one first fixing portion and at least one second fixing portion. The substrate body has a top surface and a bottom surface. The opening is in the substrate body and has a first sidewall and a second sidewall opposite to the first sidewall. The first fixing portion and the second fixing portion extends from the substrate body toward the opening, in which the first fixing portion and the second fixing portion are respectively protruded from the first sidewall and the second sidewall. The heat dissipation block is directly clamped between the first fixing portion and the second fixing portion.
STACKED SEMICONDUCTOR PACKAGE WITH FLYOVER BRIDGE
According to various examples, a device is described. The device may include a package substrate. The device may also include a plurality of semiconductor devices disposed on the package substrate, wherein the plurality of semiconductor devices comprises top surfaces and bottom surfaces. The device may also include a plurality of interconnects coupled to the package substrate, wherein the plurality of interconnects are adjacent to the plurality of semiconductor devices. The device may also include a flyover bridge coupled to the top surfaces of the plurality of semiconductor devices and the plurality of interconnects, wherein the flyover bridge is directly coupled to the package substrate by the plurality of interconnects, and wherein the bottom surfaces of the plurality of semiconductor devices are electrically isolated from the package substrate.